MS1512

Overview

The MS1512 is a silicon NPN bipolar transistor designed for UHF linear applications, specifically TV Bands IV and V. It is characterized for high linearity and Class A operation with ballasting and gold metallization. The device features a collector-emitter breakdown voltage of 25V, a maximum collector current of 1.2A, and a transition frequency of 860MHz. Maximum power dissipation is rated at 19.4W. It utilizes a chassis stud mount in the M122 package.

Feature Summary

• Designed for UHF linear applications in TV Bands IV and V
• Characterized for high linearity and Class A operation
• Features gold metallization and internal ballasting

Applications

• UHF linear amplification
• TV Band IV signal processing
• TV Band V signal processing

Procurement Notes

Verify the specific manufacturer part number against official Microsemi documentation to ensure authenticity. Confirm that the M122 chassis stud mount package matches system requirements. Check for any suffix variations that may indicate different thermal or electrical specifications. Ensure compliance with relevant industry standards for RF components.

Selection Notes

Select this component for high-linearity UHF applications requiring Class A operation. Consider the 25V breakdown voltage and 1.2A current limits for circuit design. The M122 package requires appropriate chassis mounting solutions. Evaluate thermal management needs given the 19.4W power dissipation rating.

Part Context

The MS1512 belongs to the family of silicon NPN bipolar transistors from Microsemi Corporation. These devices are engineered for robust performance in radio frequency environments. The product line supports various UHF applications, emphasizing reliability and signal integrity for broadcast and communication systems.

Replacement Considerations

No public confirmed substitute part numbers are available.