MS2201

Overview

The MS2201 is a silicon NPN bipolar RF transistor designed for Class C driver applications under DME or IFF pulse conditions. It features a collector-emitter breakdown voltage of 45V and operates within a frequency range of 1.025GHz to 1.15GHz. The device supports a maximum power output of 10W with a DC current gain (hFE) of 9dB. It utilizes an M220 chassis mount package, ensuring robust thermal management for high-power RF environments.

Feature Summary

• Designed specifically for Class C driver applications in radar systems
• Capable of handling high power output suitable for DME and IFF pulse conditions
• Utilizes a chassis mount package for efficient heat dissipation

Applications

• Distance Measuring Equipment (DME) transmitters
• Identification Friend or Foe (IFF) systems
• Microwave driver stages requiring high power output

Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm package integrity and pin alignment prior to installation. Review manufacturer documentation for any specific handling requirements associated with the M220 chassis mount configuration to ensure proper thermal interface application.

Selection Notes

Select this component for applications requiring high-frequency operation between 1.025GHz and 1.15GHz. Ensure the design accommodates the 45V breakdown voltage and 10W power capability. Consider the chassis mount requirement for thermal management when integrating into the system architecture.

Part Context

This part belongs to Microsemi's discrete semiconductor product line, specifically focusing on RF transistors. It serves as a specialized solution for military and aviation radar systems where reliable high-power amplification at microwave frequencies is critical for navigation and identification functions.

Replacement Considerations

No public confirmed substitute part numbers are available. Due to the obsolete status, engineers must evaluate equivalent specifications from other manufacturers or redesign circuits to accommodate alternative components.