MS2212

Overview

The MS2212 is an NPN bipolar RF transistor designed for high-power applications. It operates within a frequency range of 960MHz to 1.215GHz, providing a gain of 8.1dB to 8.9dB. The device supports a maximum collector-emitter voltage of 55V and a continuous current of 1.8A. It delivers 50W of output power and utilizes the M222 chassis mount package.

Feature Summary

• Designed for specialized avionics applications including JTIDS systems
• Capable of handling pulse formats with short pulse durations
• Utilizes robust M222 chassis mount packaging for thermal management

Applications

• JTIDS avionics systems
• High-power RF amplification
• Military communication equipment

Procurement Notes

Verify the specific datasheet version from Microchip Technology, as Microsemi was acquired. Confirm that the M222 package dimensions match your chassis requirements. Ensure the operating frequency aligns with the 960MHz to 1.215GHz specification. Check for RoHS compliance status if required by your manufacturing standards.

Selection Notes

Select this component when high output power at UHF frequencies is required. The M222 package is suitable for chassis mounting in rugged environments. Consider the 55V rating for circuit design headroom. Verify thermal dissipation capabilities for continuous or pulsed operation modes in your specific application context.

Part Context

This part belongs to the Microsemi (now Microchip) RF Transistors family, specifically Bipolar Junction Transistors (BJT). It is categorized under high-power RF components intended for aerospace and defense sectors. The manufacturer provides dedicated datasheets detailing electrical characteristics and mechanical drawings for integration.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology official resources for cross-reference data. Ensure any replacement matches the M222 package and electrical specifications exactly.