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The MS2267 is an NPN silicon RF microwave transistor manufactured by Microsemi. It is designed for high-power applications within the frequency range of 960 to 1215 MHz. The device features a flange mount package, specifically identified as M-214, suitable for robust mounting configurations. Key electrical specifications include a maximum power rating of 250 W and a collector-emitter voltage (Vceo) of 50 V. This component is classified as a radio frequency bipolar transistor intended for demanding microwave environments.
Verify current availability status as the MS2267 is listed as End-of-Life (EOL) by Microchip Technology. Confirm that any sourced units are genuine Microsemi products and check for specific lot traceability requirements. Ensure compatibility with existing thermal management solutions due to the flange mount design.
Select this component when designing circuits requiring high output power in the 960-1215 MHz band. Consider the 50 V breakdown voltage and 250 W power dissipation limits during thermal design. The M-214 flange mount package dictates specific PCB or chassis mounting constraints compared to surface-mount alternatives.
The MS2267 belongs to the family of RF bipolar transistors produced by Microsemi, now part of Microchip Technology. These devices are engineered for reliability in harsh electromagnetic environments. The transition from Microsemi to Microchip branding may affect documentation sources, but the component specifications remain consistent with the original Microsemi datasheets.
Publicly confirmed substitute part numbers are not available in the provided source data. Due to the EOL status, engineers should consult Microchip's official obsolescence notices for recommended alternative components or redesign guidelines.