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The MS2341 is a bipolar RF NPN transistor manufactured by Microsemi Corporation, designed for high-power applications in the 1.025 GHz to 1.15 GHz frequency range. It features a maximum collector-emitter voltage of 65V and a continuous collector current rating of 2.6A. The device delivers an output power of up to 87.5W when mounted on a chassis. It utilizes an M115 package configuration suitable for robust thermal management in demanding RF environments.
Verify the manufacturer designation carefully, as component identifiers may appear across different semiconductor entities due to corporate acquisitions or rebranding events. Ensure the specific datasheet aligns with the required electrical parameters for your design. Confirm the physical package type matches your thermal and mechanical constraints before finalizing procurement orders.
Select this component for applications requiring high power density in the L-band spectrum. Consider the thermal resistance characteristics inherent to the M115 package when designing heat dissipation solutions. Evaluate the pulsed versus continuous wave requirements against the 87.5W output specification to ensure safe operating area compliance during peak load conditions.
This component belongs to the class of bipolar junction transistors specialized for radio frequency operations. It serves as a critical active element in power amplification chains where linearity and efficiency are paramount. The technology supports aerospace and defense communication systems requiring stable signal generation over wide bandwidths.
Public confirmed substitute part numbers are not available in the provided documentation.