MS2341

MS2341

  • Description:RF TRANS NPN 65V 1.15GHZ M115
  • Series:-

SKU:3def513a8e79 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 65V 1.15GHZ M115
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Frequency - Transition:1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:9dB
  • Power - Max:87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):2.6A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:M115
  • Supplier Device Package:M115
  • Grade:-
  • Qualification:-

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MS2341

Overview

The MS2341 is a bipolar RF NPN transistor manufactured by Microsemi Corporation, designed for high-power applications in the 1.025 GHz to 1.15 GHz frequency range. It features a maximum collector-emitter voltage of 65V and a continuous collector current rating of 2.6A. The device delivers an output power of up to 87.5W when mounted on a chassis. It utilizes an M115 package configuration suitable for robust thermal management in demanding RF environments.

Feature Summary

  • High output power capability for efficient RF amplification
  • Optimized performance within the 1.025 GHz to 1.15 GHz band
  • Robust construction with 65V voltage rating for reliable operation

Applications

  • Pulsed RF amplifier stages
  • Common base configuration circuits
  • Transponder systems operating at 1090 MHz

Procurement Notes

Verify the manufacturer designation carefully, as component identifiers may appear across different semiconductor entities due to corporate acquisitions or rebranding events. Ensure the specific datasheet aligns with the required electrical parameters for your design. Confirm the physical package type matches your thermal and mechanical constraints before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high power density in the L-band spectrum. Consider the thermal resistance characteristics inherent to the M115 package when designing heat dissipation solutions. Evaluate the pulsed versus continuous wave requirements against the 87.5W output specification to ensure safe operating area compliance during peak load conditions.

Part Context

This component belongs to the class of bipolar junction transistors specialized for radio frequency operations. It serves as a critical active element in power amplification chains where linearity and efficiency are paramount. The technology supports aerospace and defense communication systems requiring stable signal generation over wide bandwidths.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

MS2341MS2341

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