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The MS23P01 is a P-channel MOSFET featuring advanced high cell density trench technology. It provides an absolute maximum drain-source voltage of -20 V and continuous drain current ratings of -3.3 A at 25°C and -2.6 A at 70°C. The device supports a gate-source voltage of ±12 V and operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a typical static on-resistance of 76 mΩ at VGS = -4.5 V, with a total gate charge of 10.1 nC.
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the component meets RoHS and Green Product requirements as stated in the product description. Ensure the ordering suffix matches the required packaging quantity of 3,000 per reel. Validate all electrical parameters against the latest published specifications to ensure compatibility with the target application design.
Select this component for small power switching and load switch applications requiring excellent RDS(ON) and gate charge performance. Consider the SOT-23 package dimensions and thermal resistance when designing the PCB layout. Evaluate the continuous and pulsed drain current limits relative to the expected operating temperature to ensure safe operation within the specified junction temperature range.
The MS23P01 is manufactured by Bruckewell Technology Corporation. It is classified as a P-channel MOSFET designed for high-performance switching applications. The device utilizes extreme high cell density to optimize electrical characteristics. It is intended for use in portable electronics and instrumentation where efficient power management is critical.
No public confirmed substitute part numbers are available in the provided documentation.
The absolute maximum drain-source voltage (VDS) rating is -20 V.
The typical static drain-source on-resistance (RDS(on)) is 76 mΩ when tested at VGS = -4.5 V and ID = -3.0 A.