MS23P01

MS23P01

$0.05
  • Description:P Channel MOSFET,20V,SOT-23
  • Series:SOT-23
  • Mfr:Bruckewell
  • Package:Tape & Reel (TR)

SKU:baf6f3ce63e8 Category: Brand:

  
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Product Detailed Parameters

  • Description:P Channel MOSFET,20V,SOT-23
  • Series:SOT-23
  • Mfr:Bruckewell
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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MS23P01

Overview

The MS23P01 is a P-channel MOSFET featuring advanced high cell density trench technology. It provides an absolute maximum drain-source voltage of -20 V and continuous drain current ratings of -3.3 A at 25°C and -2.6 A at 70°C. The device supports a gate-source voltage of ±12 V and operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a typical static on-resistance of 76 mΩ at VGS = -4.5 V, with a total gate charge of 10.1 nC.

Feature Summary

  • Advanced high cell density Trench technology
  • Super low gate charge
  • Excellent CdV/dt effect decline
  • Green Device Available

Applications

  • Notebook
  • Load Switch
  • Hand-held Instrument

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the component meets RoHS and Green Product requirements as stated in the product description. Ensure the ordering suffix matches the required packaging quantity of 3,000 per reel. Validate all electrical parameters against the latest published specifications to ensure compatibility with the target application design.

Selection Notes

Select this component for small power switching and load switch applications requiring excellent RDS(ON) and gate charge performance. Consider the SOT-23 package dimensions and thermal resistance when designing the PCB layout. Evaluate the continuous and pulsed drain current limits relative to the expected operating temperature to ensure safe operation within the specified junction temperature range.

Part Context

The MS23P01 is manufactured by Bruckewell Technology Corporation. It is classified as a P-channel MOSFET designed for high-performance switching applications. The device utilizes extreme high cell density to optimize electrical characteristics. It is intended for use in portable electronics and instrumentation where efficient power management is critical.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) rating is -20 V.

What is the typical static on-resistance value?

The typical static drain-source on-resistance (RDS(on)) is 76 mΩ when tested at VGS = -4.5 V and ID = -3.0 A.

MS23P01MS23P01
$0.05
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