MS23P05

Description：P-Channel MOSFET,-20V,SOT-23
Series：SOT-23
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:a98648ac59a9 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：P-Channel MOSFET,-20V,SOT-23
Series：SOT-23
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
Rds On (Max) @ Id, Vgs：55mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：686 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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MS23P05

Overview

The MS23P05 is a P-channel MOSFET featuring advanced high cell density trench technology. It provides excellent RDS(ON) and gate charge characteristics for small power switching applications. The device supports a drain-source voltage of -20 V and continuous drain current up to -3.1 A at 25°C. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 package.

Feature Summary

Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline

Applications

Notebook
Load Switch
Hand-held Instrument

Procurement Notes

Verify the component against the official Bruckewell Technology Corporation datasheet (Rev. A -2020). Confirm that the marking matches the specified part number and package type. Ensure compliance with RoHS and Green Product requirements as stated in the manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component for small power switching and load switch applications requiring low on-resistance and fast switching speeds. Consider the thermal resistance and maximum current ratings relative to the operating environment. Verify compatibility with the required gate drive voltages and ensure the package size fits the design constraints.

Part Context

This component belongs to the category of P-channel MOSFETs manufactured by Bruckewell Technology Corporation. It is designed using trench technology to achieve high performance in compact packages. The device is intended for use in portable electronics and instrumentation where space and efficiency are critical factors.