MS2421

MS2421

  • Description:RF TRANS NPN 65V 1.15GHZ M103
  • Series:-

SKU:8f7bb7dc636d Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 65V 1.15GHZ M103
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Frequency - Transition:1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:6.3dB
  • Power - Max:875W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 500mA, 5V
  • Current - Collector (Ic) (Max):22A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:M103
  • Supplier Device Package:M103
  • Grade:-
  • Qualification:-

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MS2421

Overview

The MS2421 is an NPN RF bipolar junction transistor manufactured by Microsemi Corporation. It operates within a transition frequency range of 960 MHz to 1.215 GHz and supports a maximum collector current of 22 A with a breakdown voltage of 65 V. The device delivers a maximum power output of 875 W and provides a gain of 6.3 dB. Designed for robust performance, it features a junction temperature rating of 200°C and utilizes the M138 base-mount package. This component is classified as a dual-polar RF transistor intended for high-power microwave applications.

Feature Summary

  • High-power RF capability suitable for demanding microwave environments
  • Robust thermal management with a 200°C maximum junction temperature rating
  • Designed specifically for avionics and military-grade radio frequency systems

Applications

  • Avionics communication systems
  • Military radar transmitters
  • High-power RF amplification stages

Procurement Notes

Verify the manufacturer origin carefully, as the MS2421 designation is also used by Advanced Power Technology for similar RF components. Confirm that the specific unit matches the Microsemi Corporation specifications regarding the M138 package and electrical ratings before integration into critical designs.

Selection Notes

Select this component when designing circuits requiring high power handling at UHF frequencies. Ensure the thermal design accommodates the 875 W output capability and that the system architecture supports the 22 A collector current limits defined in the datasheet.

Part Context

This part belongs to the family of high-power RF transistors utilized in defense and aerospace sectors. It serves as a critical active element in transmitter chains where reliability and power density are paramount requirements for mission-critical operations.

Replacement Considerations

Cross-reference models such as the MS2422 may offer similar electrical characteristics but require verification of pinout compatibility and specific gain parameters against the original design requirements.

MS2421MS2421

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