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The MS2554 is a high-performance NPN bipolar RF transistor manufactured by Microsemi Corporation. Designed for high peak pulse power applications, it operates within the frequency range of 1.025 GHz to 1.15 GHz. The device features a collector-emitter breakdown voltage of 65V and supports a continuous current of 17.8A. It delivers up to 600W of power output and utilizes an M218 chassis mount package.
Verify the manufacturer designation carefully, as the MS2554 identifier has been associated with different component types across various distributors. Confirm that the specific part is indeed the Microsemi/NXP Bipolar RF Transistor intended for DME/TACAN applications rather than other unrelated devices sharing similar nomenclature. Ensure the datasheet matches the M218 chassis mount specification and the 65V/17.8A electrical ratings before finalizing procurement.
Select this component when designing radar or navigation transmitters requiring high peak pulse power capability. The M218 chassis mount package indicates suitability for industrial or aerospace thermal management solutions where direct mounting to a heat sink is required. Consider the 65V breakdown voltage and 17.8A current rating to ensure compatibility with the specific power supply and load requirements of the target RF circuit architecture.
This component belongs to the category of Bipolar RF Transistors. It is distinct from other Microsemi products such as the SGM2554, which is a single-channel power distribution switch. The MS2554 is specifically classified as a discrete semiconductor device for high-frequency amplification rather than power management or logic control.
Public confirmed substitute part numbers are not available in the provided documentation.