MSB100P55

$1.37

Description：P-Channel MOSFET,100V,TO-263
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:d225bc415a38 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：P-Channel MOSFET,100V,TO-263
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：21mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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MSB100P55

Overview

The MSB100P55 is a P-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a -100V drain-source voltage rating and a continuous drain current of -55A at 25°C case temperature. The device guarantees a maximum on-resistance of 21mΩ at VGS=-10V and ID=-20A. Single pulse avalanche energy is rated at 274mJ with 100% testing. Power dissipation reaches 170W at 25°C case temperature. The component operates within a junction temperature range of -55°C to +150°C and is housed in a TO-263 package.

Feature Summary

Advanced trench DMOS technology minimizes on-resistance and enhances switching performance.
Guaranteed single pulse avalanche energy capability for robust operation in commutation modes.
Optimized for high efficiency applications requiring superior thermal handling.

Applications

Networking equipment power stages
Load switch implementations
LED driver circuits
Quick charger designs

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design integration. Confirm that the TO-263 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-case resistance values under actual operating conditions.

Selection Notes

Select this component when designing P-Channel switching solutions requiring low on-resistance and high current handling capabilities. Consider the -100V breakdown voltage and -55A continuous current limits relative to the system's peak load demands. Evaluate the thermal resistance parameters to determine appropriate heatsinking or board layout constraints for sustained operation.

Part Context

This device belongs to Bruckewell Technology Corporation's lineup of power MOSFETs manufactured using advanced trench DMOS processes. The product line targets applications demanding high efficiency and reliable switching performance. The MSB100P55 specifically addresses needs for robust power management in compact form factors.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinout configurations and electrical ratings carefully when considering alternative components from other manufacturers.