MSB300N25

$2.58

Description：N Channel MOSFET,300V,TO-263
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:11fa7784c995 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,300V,TO-263
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：180mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-50°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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MSB300N25

Overview

The MSB300N25 is an N-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a 300V drain-source voltage rating and a maximum continuous drain current of 25A at 25°C case temperature. The device guarantees a static drain-source on-resistance of 180mΩ at VGS=10V and ID=15A. It supports a pulsed drain current of 100A and offers single-pulse avalanche energy of 31mJ. Operating junction temperatures range from -50°C to +150°C.

Feature Summary

Advanced trench DMOS technology minimizes on-resistance while providing superior switching performance.
Enhanced capability to withstand high energy pulses in both avalanche and commutation modes.
Guaranteed 100% single-pulse avalanche energy testing ensures robust reliability under stress conditions.

Applications

Power Supply
Industrial DC/DC Conversion Circuits
Synchronous Rectifier
BMS Applications

Procurement Notes

Verify the specific datasheet revision (Rev. A -2023) matches your design requirements. Confirm that thermal management solutions align with the specified junction-to-ambient resistance values. Ensure gate drive voltages remain within the absolute maximum ratings to prevent breakdown. Validate component authenticity through authorized distribution channels.

Selection Notes

Select this component for applications requiring high-efficiency switching at moderate currents. Consider the TO-263 package dimensions for PCB layout constraints. Evaluate thermal dissipation capabilities based on the specific ambient operating conditions. Verify compatibility with synchronous rectification topologies due to the low on-resistance characteristics.

Part Context

This part belongs to the Bruckewell Technology Corporation semiconductor portfolio. It is classified as a power MOSFET suitable for general-purpose switching applications. The device represents standard discrete power electronics components used in industrial and consumer electronic power conversion systems.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully before implementation.