MSB40N150

$0.93

Description：N Channel MOSFET,40V,TO-263
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:e72581727b09 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,40V,TO-263
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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MSB40N150

Overview

The MSB40N150 is an N-channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a drain-source voltage of 40 V and a typical on-resistance of 3.8 mΩ at VGS=10V. The device supports a continuous drain current of 150 A at 25°C case temperature and withstands pulsed currents up to 600 A. Single pulse avalanche energy is rated at 312 mJ with inductance of 0.1 mH. Operating junction temperature ranges from -55 to +150 °C.

Feature Summary

Advanced trench DMOS technology minimizes on-resistance while providing superior switching performance.
Capable of withstanding high energy pulses in both avalanche and commutation modes.
Enhanced dv/dt capability improves reliability during rapid voltage transitions.
Guaranteed 100% single pulse avalanche energy testing ensures full function reliability.

Applications

Motherboard (MB) power stages
Video Graphics Array (VGA) circuits
Processor core voltage regulation
Point-of-load (POL) applications
Second synchronous rectification in SMPS

Procurement Notes

Verify the component against the official Bruckewell Technology Corporation datasheet Rev. A-2020. Confirm that the marking matches the publication order number exactly. Ensure the package type corresponds to TO-263 dimensions. Check RoHS compliance status as indicated in the documentation. Validate electrical parameters against the specified test conditions provided in the source material.

Selection Notes

Select this component for designs requiring low conduction losses and robust avalanche handling. The 40 V rating suits low-voltage DC-DC converters. Consider thermal management due to the 166 W dissipation rating at 25°C case temperature. Verify gate charge requirements against driver capabilities for optimal switching speeds. Ensure the application stays within the safe operating area limits defined in the datasheet.

Part Context

This part belongs to the Bruckewell Technology Corporation lineup of N-channel MOSFETs. It utilizes trench DMOS technology tailored for minimizing RDS(ON). The device is marketed for high-efficiency fast-switching applications. It meets Green Product requirements and RoHS standards. The specific model designation identifies its voltage and current characteristics within the product family.