MSB92WT1G

Single Bipolar Transistors Overview

The MSB92WT1G is a single PNP bipolar junction transistor manufactured by onsemi, designed for surface-mount applications in the SC-70-3 package. It operates with silicon technology and supports a maximum DC collector current of 500 mA. The device withstands high voltages, featuring a collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 300 V each, while maintaining an emitter-base voltage (VEBO) rating of 5 V. Thermal performance includes a power dissipation capacity of 150 mW and a maximum operating temperature of +150°C. Electrical characteristics specify a saturation voltage of 500 mV and a gain-bandwidth product (fT) of 50 MHz, ensuring reliable switching and amplification in compact electronic circuits.

Single Bipolar Transistors Feature Summary

• High-voltage capability with 300 V collector-emitter and collector-base ratings suitable for demanding circuit environments
• Compact SC-70-3 surface-mount package design enabling efficient board space utilization
• Robust thermal stability supporting operation up to +150°C junction temperature
• Integrated silicon construction providing consistent electrical performance for general-purpose applications

Single Bipolar Transistors Applications

• General-purpose switching circuits requiring high voltage tolerance
• Amplifier stages in consumer electronics and industrial control systems
• Power management modules utilizing compact surface-mount form factors

Single Bipolar Transistors Procurement Notes

Verify component authenticity through official onsemi channels or authorized distributors. Confirm RoHS compliance status via current datasheets. Check for recent Product Change Notifications regarding packaging or manufacturing site updates. Ensure storage conditions align with moisture sensitivity level requirements. Validate part markings against official specifications to prevent counterfeit introduction.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 300 V breakdown voltage and 500 mA current capacity is required in a small footprint. Consider the 150 mW power dissipation limit during thermal design. Compare fT of 50 MHz against signal frequency requirements. Evaluate SC-70-3 package constraints against PCB layout needs. Verify compatibility with existing biasing networks and drive capabilities.

Single Bipolar Transistors Part Context

Part of the MSB92W series from onsemi, focusing on high-voltage PNP transistors in small packages. This series complements other variants like NSVMSB92T1G, which offers automotive qualification. The MSB92WT1G serves as a standard commercial-grade option within the broader portfolio of surface-mount bipolar devices designed for versatile electronic applications.

Single Bipolar Transistors Replacement Considerations

NSVMSB92T1G is a verified alternative offering AEC-Q101 automotive qualification with identical electrical parameters including 300 V rating and 150 mA current limit. Verify package compatibility and lead configuration before substitution.