MSC017SMA120D/S

Single FETs, MOSFETs Overview

The MSC017SMA120D/S is a silicon carbide (SiC) MOSFET manufactured by Microchip Technology. It features a single N-channel configuration with a drain-source breakdown voltage of 1200 V and a maximum continuous drain current of 119 A. The device exhibits a typical on-resistance of 17 mΩ at 25°C, rising to approximately 20 mΩ under standard test conditions. Gate-source voltage limits range from -10 V to +23 V, with a threshold voltage of 3 V. Total gate charge is specified at 194 nC. The component operates within a temperature range of -55°C to +175°C and is supplied in a bare die format.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide semiconductor technology for superior thermal conductivity and high-temperature operation compared to traditional silicon devices.
• Features an enhancement-mode N-channel architecture designed for low switching losses and high-efficiency power conversion.
• Provides zero reverse recovery charge characteristics inherent to the SiC material structure.

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'D/S' against the official Microchip datasheet to confirm it denotes the bare die package variant. Ensure compatibility with your substrate mounting process, as this component lacks a standard plastic or ceramic housing. Confirm RoHS compliance status directly with the manufacturer, as regulatory details may vary by production lot. Validate that your assembly equipment supports direct die attachment methods required for this form factor.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high voltage blocking capability combined with low conduction losses. The bare die format necessitates careful thermal management design using direct bond copper or similar substrates. Consider the gate charge requirements for driver selection to optimize switching performance. Evaluate the thermal resistance path from the die junction to the heatsink to ensure operation remains within the 175°C maximum limit under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's MSiC™ family of silicon carbide power MOSFETs. These components are engineered to replace silicon counterparts in high-power applications, offering reduced system size and weight due to higher operating frequencies. The 'MSC017SMA120' series specifically targets 1200V applications, providing a balance between on-resistance and switching speed for efficient power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip technical support for qualified alternatives if this specific die variant is unavailable. Ensure any replacement matches the 1200V rating, channel configuration, and package footprint constraints.