MSC080SMA120B

$10.88

Description：SICFET N-CH 1200V 37A TO247-3
Series：-
Mfr：Microchip Technology
Package：Tube

SKU:62714979dbda Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

MSC080SMA120B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SICFET N-CH 1200V 37A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MSC080SMA120B

Description：SICFET N-CH 1200V 37A TO247-3
Series：-
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 20 V
Vgs (Max)：+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds：838 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for MSC080SMA120B

MSC080SMA120B

Single FETs, MOSFETs Overview

The MSC080SMA120B is a Silicon Carbide (SiC) N-Channel MOSFET rated for 1200V drain-source voltage. It features an 80 mΩ typical on-resistance at VGS = 20V and 90 mΩ at VGS = 18V. The device supports continuous drain currents of 40A at 25°C case temperature and 28A at 100°C. It operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 231W at 25°C. The component utilizes a TO-247 package.

Single FETs, MOSFETs Feature Summary

Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperatures up to 175 °C
Superior avalanche ruggedness

Single FETs, MOSFETs Applications

Photovoltaic inverters, converters, and industrial motor drives
Smart grid transmission and distribution
Hybrid Electric Vehicle powertrains and Electric Vehicle chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact electrical tolerances and packaging configurations. Ensure compatibility with AEC-Q101 qualification requirements if automotive standards are mandated. Confirm RoHS compliance status through current datasheet revisions before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and compact system design. The fast switching characteristics enable lower switching losses and improved thermal capabilities. Consider the simple drive requirements and ease of paralleling when designing multi-device power stages.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip Technology silicon carbide MOSFET family. It is designed to replace traditional silicon devices in high-voltage power conversion systems. The component integrates advanced SiC technology to deliver superior performance metrics compared to conventional semiconductor solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying absolute maximum ratings and thermal characteristics.