MSC1175MA

MSC1175MA

  • Description:RF TRANS NPN 65V 1.15GHZ M218
  • Series:-

SKU:e48ca8814ec7 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 65V 1.15GHZ M218
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Frequency - Transition:1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:8dB
  • Power - Max:400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 1A, 5V
  • Current - Collector (Ic) (Max):12A
  • Operating Temperature:250°C
  • Mounting Type:Chassis Mount
  • Package / Case:M218
  • Supplier Device Package:M218
  • Grade:-
  • Qualification:-

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MSC1175MA

Overview

The MSC1175MA is an NPN RF power transistor manufactured by Microsemi Corporation. It is designed for high-frequency applications, operating within the frequency range of 1.025 GHz to 1.15 GHz. The device provides up to 400W of output power and features a maximum collector-emitter breakdown voltage of 65V. Key electrical specifications include a maximum current-collector (Ic) rating of 12A and a transition frequency extending to 1.15 GHz. The component is housed in a bulk package configuration.

Feature Summary

  • Designed for high-frequency RF operations
  • Capable of delivering substantial output power levels
  • Utilizes NPN bipolar junction transistor architecture

Applications

  • High-power RF amplifier stages
  • Microwave communication systems
  • Broadband signal processing equipment

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or surplus suppliers, as standard manufacturing may have ceased. Ensure compatibility with existing system designs requiring 400W RF performance at frequencies between 1.025 GHz and 1.15 GHz. Check for alternative sourcing options if lead times are critical.

Selection Notes

Select the MSC1175MA when high-output power and specific UHF frequency coverage are required. Consider the 65V breakdown limit and 12A current capacity for circuit design constraints. Evaluate thermal management requirements due to high power dissipation. Verify that the bulk packaging format aligns with assembly processes. Compare against newer generations if long-term supply stability is a primary concern.

Part Context

This part belongs to Microsemi's portfolio of RF transistors intended for demanding wireless infrastructure and radar applications. The company specializes in semiconductor solutions for aerospace, defense, and communications markets. The MSC1175MA represents a legacy product line focused on high-power amplification capabilities within the specified frequency band.

Replacement Considerations

As the MSC1175MA is marked as obsolete, direct substitutes may not be available from the original manufacturer. Engineers should consult Microsemi's current RF transistor catalog for modern equivalents offering similar power and frequency characteristics. Cross-reference with other manufacturers specializing in high-power GaN or LDMOS devices for potential functional replacements.

MSC1175MAMSC1175MA

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