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Product Detailed Parameters
- Description：RF TRANS NPN 65V 1.15GHZ M216
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：65V
- Frequency - Transition：1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f)：-
- Gain：6.5dB
- Power - Max：1000W
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 1A, 5V
- Current - Collector (Ic) (Max)：28A
- Operating Temperature：250°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：M216
- Supplier Device Package：M216
- Grade：-
- Qualification：-
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Overview
The MSC1400M is an NPN RF power transistor manufactured by Microsemi Corporation, housed in the M216 package. It features a collector-emitter breakdown voltage of 65V and operates within a transition frequency range of 1.025GHz to 1.15GHz. The device provides a gain of 6.5dB and supports a maximum power output of 1000W. This component is classified under Bipolar (BJT) - RF transistors and is currently listed as obsolete.
Feature Summary
- Designed for high-power pulsed operation in avionics applications
- Optimized for IFF (Identification Friend or Foe) systems
- Capable of delivering up to 1000W output power
Applications
- IFF avionics systems
- High-power pulsed transistor circuits
- RF amplifier stages requiring 1kW output
Procurement Notes
Verify availability status carefully as this component is marked obsolete. Confirm exact package type M216 and electrical specifications against original datasheets before integration. Check for RoHS compliance information as records indicate no specific data. Ensure substitute components meet identical RF and power requirements.
Selection Notes
Select this part for legacy avionics designs requiring high-power RF performance at approximately 1.15GHz. Consider the obsolete lifecycle status when planning long-term production. Evaluate thermal management needs for 1000W operation. Verify compatibility with existing circuit topologies designed for NPN BJT RF amplifiers.
Part Context
Microsemi Corporation specializes in high-performance semiconductors for aerospace and defense. The MSC1400M belongs to their RF transistor portfolio, targeting specialized military and aviation communication systems. This model represents a high-power solution for critical identification and navigation electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation due to the obsolete status. Consult manufacturer archives or authorized distributors for potential cross-reference options meeting 1000W RF power specifications.
