Single Bipolar Transistors MSC2712GT1 product image

MSC2712GT1

$0.03
  • Description:TRANS NPN 50V 0.1A SC-59
  • Series:-

SKU:b079f4b58c0e Category: Brand:

  
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MSC2712GT1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A SC-59. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MSC2712GT1

  • Description:TRANS NPN 50V 0.1A SC-59
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MSC2712GT1

MSC2712GT1

Single Bipolar Transistors Overview

The MSC2712GT1G is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-59-3 (SOT-563) surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 60 V. Key electrical characteristics include a minimum DC current gain (hFE) of 200, a transition frequency (fT) of 50 MHz, and a collector-emitter saturation voltage of 500 mV. Power dissipation is rated at 200 mW, with a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • High DC current gain for effective signal amplification
  • Compact SC-59-3 surface-mount package design
  • Silicon-based construction for reliable operation

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Small-signal amplification circuits
  • Driver stages for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the complete part number includes the suffix 'G' to confirm RoHS compliance and lead-free status as specified by the manufacturer. Confirm the specific packaging type required, such as cut tape or reel, matches the procurement specifications. Ensure the component source is an authorized distributor to guarantee authenticity and traceability of the silicon material and manufacturing lot.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal NPN transistor with high current gain is required in a compact surface-mount footprint. The 50 V collector-emitter rating suits low-voltage logic interfacing and general-purpose switching tasks. Consider the 200 mW power dissipation limit for thermal management in dense PCB layouts. Verify that the 50 MHz transition frequency meets the bandwidth requirements of the intended application circuit.

Single Bipolar Transistors Part Context

This component belongs to the MSC2712GT1 series of small-signal transistors from onsemi. It is categorized under bipolar junction transistors (BJTs) within the broader transistor product family. The SC-59-3 package is commonly used in portable electronics and space-constrained designs where minimal board area is critical for assembly.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic equivalents may differ in hFE ranges or package pinouts.

MSC2712GT1MSC2712GT1
$0.03
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