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Product Detailed Parameters
- Description：DIODE MOD SIC 1700V 50A SOT227
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Diode Configuration：2 Independent
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1700 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 50 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 1700 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227 (ISOTOP®)
- Grade：-
- Qualification：-
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Overview
The MSC2X51SDA170J is a dual silicon carbide Schottky barrier diode manufactured by Microchip Technology. It features a maximum DC reverse voltage of 1700 V and a maximum DC forward current of 50 A at a case temperature of 115 °C. The device utilizes an isolated SOT-227 package with a junction-to-case thermal resistance ranging from 0.35 to 0.50 °C/W. It operates within a temperature range of -55 °C to +175 °C and provides isolation voltage up to 2500 V RMS.
Feature Summary
- Dual parallel configuration for high-current applications
- Zero reverse recovery charge for low switching losses
- Isolated package enabling direct heatsink mounting
- Rated for avalanche energy handling
Applications
- Power factor correction circuits
- Anti-parallel diodes in inverters and converters
- Freewheeling diodes in switch-mode power supplies
- Snubber and clamp diodes
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm the internal circuit topology, as variants exist within this product family. Ensure that the selected component matches the required electrical ratings for your specific application environment. Cross-reference the datasheet revision date to guarantee access to the most current technical specifications and mechanical drawings.
Selection Notes
Select this component when designing high-voltage systems requiring robust thermal performance and fast switching characteristics. The dual parallel configuration supports higher current demands compared to single-diode modules. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values to ensure reliable operation under continuous load conditions.
Part Context
This device belongs to the Microsemi (now Microchip) silicon carbide power Schottky barrier diode line. It is designed to replace traditional silicon diode solutions in high-voltage applications, offering improved efficiency and reduced total cost of ownership. The product series includes both parallel and anti-parallel configurations to suit various circuit topologies.
Replacement Considerations
The MSC2X50SDA170J is a documented alternative within the same datasheet, featuring an anti-parallel configuration instead of parallel. Verify pinout compatibility and thermal interface requirements before substitution.
