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The MSC3930-BT1G is an NPN RF amplifier transistor manufactured by onsemi. It is housed in a SC-70 (SOT-323) surface-mount package with three terminals. The device features a collector-emitter breakdown voltage of 20V and supports a transition frequency suitable for radio frequency applications. It has a maximum power dissipation rating of 200mW and a current rating of 30mA, designed for efficient signal amplification in compact electronic systems.
Verify component authenticity through authorized onsemi distribution channels to ensure reliability. Confirm that the specific part number matches the required RF performance specifications for your application. Check for RoHS compliance status if environmental regulations apply to your manufacturing process. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.
Select this component when designing RF circuits requiring an NPN transistor with a 20V breakdown voltage and low power dissipation. Consider the SC-70 package size for tight board space limitations. Evaluate the transition frequency against your operating bandwidth requirements. Compare thermal characteristics with alternative packages if heat dissipation is a critical constraint in your system design.
This component belongs to onsemi's portfolio of bipolar RF transistors. It is specifically engineered for high-frequency applications where small form factors are essential. The SC-70 package provides a balance between electrical performance and physical footprint, making it suitable for modern portable electronics and compact RF modules requiring reliable signal amplification.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official onsemi resources or authorized distributors for verified cross-reference information before implementing any alternative components in your design.