MSC3930-BT1G

MSC3930-BT1G

$0.07
  • Description:RF TRANS NPN 20V 150MHZ SC-70-3
  • Series:-

SKU:20f62b33c41c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 20V 150MHZ SC-70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:150MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 1mA, 10V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)
  • Grade:-
  • Qualification:-

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MSC3930-BT1G

Overview

The MSC3930-BT1G is an NPN RF amplifier transistor manufactured by onsemi. It is housed in a SC-70 (SOT-323) surface-mount package with three terminals. The device features a collector-emitter breakdown voltage of 20V and supports a transition frequency suitable for radio frequency applications. It has a maximum power dissipation rating of 200mW and a current rating of 30mA, designed for efficient signal amplification in compact electronic systems.

Feature Summary

  • NPN bipolar junction transistor architecture optimized for RF signal amplification
  • Compact SC-70 surface-mount package design for space-constrained PCB layouts
  • High-frequency transition capability supporting radio frequency circuit operations

Applications

  • RF signal amplification stages in communication modules
  • Low-noise amplifier circuits in wireless devices
  • Frequency conversion components in transceiver systems

Procurement Notes

Verify component authenticity through authorized onsemi distribution channels to ensure reliability. Confirm that the specific part number matches the required RF performance specifications for your application. Check for RoHS compliance status if environmental regulations apply to your manufacturing process. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.

Selection Notes

Select this component when designing RF circuits requiring an NPN transistor with a 20V breakdown voltage and low power dissipation. Consider the SC-70 package size for tight board space limitations. Evaluate the transition frequency against your operating bandwidth requirements. Compare thermal characteristics with alternative packages if heat dissipation is a critical constraint in your system design.

Part Context

This component belongs to onsemi's portfolio of bipolar RF transistors. It is specifically engineered for high-frequency applications where small form factors are essential. The SC-70 package provides a balance between electrical performance and physical footprint, making it suitable for modern portable electronics and compact RF modules requiring reliable signal amplification.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official onsemi resources or authorized distributors for verified cross-reference information before implementing any alternative components in your design.

MSC3930-BT1GMSC3930-BT1G
$0.07
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