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MSCC60VRM99CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 600V 19A SP3F. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCC60VRM99CT3AG
- Description：MOSFET 600V 19A SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：600V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP3F
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCC60VRM99CT3AG
FET, MOSFET Arrays Overview
The MSCC60VRM99CT3AG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It utilizes COOLMOS technology within an SP3F chassis-mount package. The device features a 600V drain-source voltage rating and supports a continuous drain current of 19A at case temperature. Key electrical parameters include an on-state resistance of 99mΩ and a gate-source voltage range of -10V to +25V. The component operates within a temperature range of -40°C to +125°C, designed for high-efficiency power switching applications.
FET, MOSFET Arrays Feature Summary
- Utilizes Silicon Carbide (SiC) COOLMOS technology for enhanced thermal performance and switching efficiency.
- Integrated Schottky Barrier Diode (SBD) configuration reduces external component requirements.
- SP3F chassis-mount form factor facilitates robust mechanical integration and heat dissipation.
FET, MOSFET Arrays Applications
- Vienna Rectifier topologies
- High-efficiency power factor correction circuits
- Medium to high-current power switching systems
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix and manufacturing site details against the official datasheet before procurement. Confirm that the SP3F package dimensions and mounting hole specifications match the target chassis design. Ensure thermal interface material selection aligns with the module's maximum operating temperature limits and power dissipation requirements for reliable long-term operation.
FET, MOSFET Arrays Selection Notes
Select this component when a 600V SiC MOSFET with integrated SBD is required in an SP3F package. The 99mΩ on-resistance and 19A current rating suit medium-power applications. Consider the chassis-mount style for systems requiring direct heatsink attachment. Validate that the gate drive voltage capabilities support the specified -10V to +25V range for optimal switching performance.
FET, MOSFET Arrays Part Context
This module belongs to Microchip's portfolio of discrete semiconductor modules leveraging advanced SiC technology. It is part of a series designed to improve system-level efficiency and reduce size in power electronics. The SP3F packaging is commonly used in industrial and automotive power conversion solutions where high reliability and thermal management are critical.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing pinout configurations, thermal characteristics, and electrical ratings with alternative SiC MOSFET modules from the same manufacturer or other vendors.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
