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Product Detailed Parameters
- Description：DIODE MODULE SIC 1700V 150A D1P
- Series：-
- Mfr：Microchip Technology
- Package：Box
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1700 V
- Current - Average Rectified (Io) (per Diode)：150A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 150 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：600 µA @ 1700 V
- Operating Temperature - Junction：-40°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：D1P
- Grade：-
- Qualification：-
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Overview
The MSCDC150KK170D1PAG is a Silicon Carbide Schottky Barrier Diode module manufactured by Microchip Technology. It features a dual configuration housed in the D1PAG package, designed for screw mount installation. The component supports a peak repetitive reverse voltage of 1.7 kV and a forward current rating of 150 A. It operates within a junction temperature range of -40°C to +175°C and exhibits a maximum forward voltage drop of 1.8 V at rated current.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-temperature stability and low switching losses.
- Features a dual diode configuration suitable for various power conversion topologies.
- Designed with a robust screw-mount base for efficient thermal management.
Applications
- High-efficiency motor drives
- Industrial power supplies
- Uninterruptible power systems
Procurement Notes
Verify the specific suffix 'D1PAG' against official Microchip documentation to confirm the exact package outline and terminal configuration. Ensure that the thermal interface material selection aligns with the specified mounting torque requirements for the screw-mount terminals. Cross-reference the datasheet revision history to confirm compatibility with existing design layouts.
Selection Notes
Select this component when a dual SiC Schottky configuration is required for high-voltage applications up to 1.7 kV. The 150 A current rating makes it suitable for medium-to-high power density designs. Consider the D1PAG package dimensions and thermal resistance characteristics during PCB or chassis layout planning to ensure adequate heat dissipation under continuous load conditions.
Part Context
This part belongs to Microchip's MSCDC series of Silicon Carbide Schottky diode modules. These modules are engineered to replace traditional silicon rectifiers in demanding environments. The series offers improved efficiency and reduced system size compared to equivalent silicon-based solutions, supporting modern power electronics trends toward higher frequencies and temperatures.
Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Do not assume pin-compatible replacements from other manufacturers without verifying electrical parameters and mechanical dimensions.
