MSCDC200A170D1PAG

MSCDC200A170D1PAG

$394.86
  • Description:DIODE MODULE SIC 1700V 200A D1P
  • Series:-

SKU:f202b2fd0a7d Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE SIC 1700V 200A D1P
  • Series:-
  • Mfr:Microchip Technology
  • Package:Box
  • Diode Configuration:1 Pair Series Connection
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 200 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:800 µA @ 1700 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:D1P
  • Grade:-
  • Qualification:-

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MSCDC200A170D1PAG

Overview

The MSCDC200A170D1PAG is a Silicon Carbide Schottky diode module manufactured by Microchip Technology. It features a dual series connection configuration within the D1P package, designed for screw mounting. The device supports a repetitive reverse voltage of 1700 V and a forward current of 200 A. The typical forward voltage is 1.5 V, with an operating temperature range from -40°C to +125°C.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology to achieve zero reverse recovery and zero forward recovery characteristics.
  • Features a phase leg configuration with dual series connection for high-voltage applications.
  • Designed for robust thermal management and mechanical stability via screw mount installation.

Applications

  • High-power industrial motor drives
  • Uninterruptible power supply (UPS) systems
  • Industrial inverter circuits

Procurement Notes

Verify the specific suffix D1PAG against the official Microchip datasheet to confirm pinout and terminal configuration compatibility. Ensure that the required forward current rating of 200 A and reverse voltage of 1700 V align with the system's peak electrical demands. Confirm that the screw mount interface matches the existing heatsink or chassis design specifications before finalizing the order.

Selection Notes

Select this component when designing circuits requiring high efficiency and fast switching speeds without reverse recovery losses. The SiC material offers superior performance compared to traditional silicon diodes in high-temperature environments. Consider the 1.5 V forward voltage drop for thermal calculations and ensure the application operates within the specified -40°C to +125°C temperature range for reliable long-term operation.

Part Context

This module belongs to Microchip's PM-DIODE-SIC-SBD-D1P product family, which focuses on high-performance power discrete solutions. The D1P package provides a standardized form factor for easy integration into various power electronics architectures. As part of the broader SiC portfolio, it complements other Microchip power devices aimed at reducing system size and improving energy conversion efficiency.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-compatibility with existing designs by matching electrical parameters and mechanical dimensions carefully.

FAQ

What is the reverse recovery characteristic of this diode?

The MSCDC200A170D1PAG features zero reverse recovery due to its Silicon Carbide Schottky construction.

How is this module mechanically mounted?

The device utilizes a screw mount installation style for secure attachment to heatsinks or chassis.

MSCDC200A170D1PAGMSCDC200A170D1PAG
$394.86
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