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Product Detailed Parameters
- Description：PM-IGBT-SBD-BL2
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：110 A
- Power - Max：375 W
- Current - Collector Cutoff (Max)：25 µA
- Input Capacitance (Cies) @ Vce：2.77 nF @ 25 V
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Overview
The MSCGLQ50DDU120CTBL2NG is a double dual common emitter high-speed IGBT4 power module rated for 1200 V and 50 A. It integrates SiC Schottky diodes with zero reverse recovery and positive temperature coefficient on forward voltage. Key electrical parameters include a collector-emitter saturation voltage of 2.05 V at 50 A, total gate charge of 230 nC, and turn-on/turn-off switching energies of 2.8 mJ each at 150°C. The package weighs 21.5 g with an RMS isolation voltage of 2500 V and junction-to-heatsink thermal resistance of 0.4 °C/W.
Feature Summary
- High speed IGBT4 technology providing low voltage drop and low switching losses
- SiC Schottky Diode integration featuring zero reverse and forward recovery
- Kelvin emitter configuration for simplified drive circuitry
- Internal thermistor for precise temperature monitoring
Applications
- High reliability power systems
- AC switches
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm exact pinout and terminal configurations. Ensure that the selected component matches the required thermal interface specifications and mounting torque requirements for reliable operation within the specified temperature range.
Selection Notes
Select this module for applications requiring high-frequency operation and low thermal resistance. Consider the integrated SiC diodes for improved efficiency in hard-switching topologies. Verify that the gate drive voltage aligns with the specified ±20 V limit and that the PCB layout accommodates the Kelvin emitter connections for optimal performance.
Part Context
This device belongs to Microchip's high-speed IGBT4 power module family, designed for advanced power conversion systems. It combines silicon IGBT technology with silicon carbide diodes to enhance overall system efficiency and reduce switching losses compared to traditional silicon-based modules.
Replacement Considerations
Consult official Microchip substitution guides for compatible alternatives. Verify that any replacement part maintains identical voltage ratings, current capabilities, and thermal characteristics to ensure seamless integration without redesigning the heatsink or drive circuitry.
