MSCGLQ50DU120CTBL1NG

Overview

The MSCGLQ50DU120CTBL1NG is a dual common emitter high speed IGBT4 power module rated for 1200 V and 50 A. It integrates two IGBT4 switches and two SiC Schottky diodes in an isolated package with screw mounting terminals. Key electrical parameters include a collector-emitter saturation voltage of 2.05 V at 50 A, total gate charge of 230 nC, and turn-on/turn-off switching energies of 2.8 mJ each at 150°C. The device features a junction-to-heatsink thermal resistance of 0.4 °C/W for the IGBTs and 0.854 °C/W for the diodes. Operating junction temperature ranges from -55°C to 175°C, with a recommended limit under switching conditions.

Feature Summary

• High speed IGBT4 technology providing low voltage drop, low leakage current, and reduced switching losses.
• Integrated Silicon Carbide (SiC) Schottky diodes offering zero reverse recovery, zero forward recovery, and positive temperature coefficient on forward voltage.
• Kelvin emitter configuration included to facilitate easy gate drive connection.
• Utilizes a silicon nitride (Si3N4) substrate with thick copper layers to enhance thermal performance and reduce weight.

Applications

• High reliability power systems
• AC switches

Procurement Notes

Verify component authenticity by checking datasheet revision history and ordering codes against official Microchip Technology records. Ensure handling procedures account for electrostatic discharge sensitivity during installation. Confirm that thermal interface material specifications align with the required junction-to-heatsink thermal resistance values for optimal heat dissipation.

Selection Notes

Select this module for applications requiring high efficiency and fast switching frequencies due to its IGBT4 and SiC diode integration. Evaluate thermal management requirements based on the specified junction-to-heatsink thermal resistance and operating temperature range. Ensure gate drive circuits support the ±20 V gate-emitter voltage rating and appropriate resistances for the specified switching energy characteristics.

Part Context

This component belongs to Microchip's high speed IGBT4 power module family, designed for advanced power conversion systems. It combines silicon IGBT technology with silicon carbide diodes to improve system efficiency and power density compared to traditional silicon-only modules.

Replacement Considerations

Direct replacements must match the 1200 V / 50 A rating, dual common emitter topology, and similar thermal resistance values. Verify pinout compatibility and gate drive requirements before substitution.

FAQ

What is the maximum short circuit withstand time for this module?

The module can withstand a short circuit condition for up to 10 μs when the bus voltage is 900 V and the junction temperature is 150°C.

Does the module include an integrated temperature sensor?

Yes, the module includes an internal NTC thermistor for temperature monitoring, with a typical resistance of 50 kΩ at 25°C.

What is the isolation voltage rating of the package?

The RMS isolation voltage between any terminal and the case is rated at 2500 V for one minute at 50 Hz/60 Hz.