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MSCM20AM058G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 200V 280A LP8. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCM20AM058G
- Description：MOSFET 2N-CH 200V 280A LP8
- Series：-
- Mfr：Microchip Technology
- Package：Box
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：280A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：LP8
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCM20AM058G
FET, MOSFET Arrays Overview
The MSCM20AM058G is a silicon-based MOSFET module manufactured by Microchip Technology. It utilizes an LP-8 package and integrates PM-MOSFET and FREDFET technologies in a low-profile configuration. The device features a reverse voltage rating of 200 V and a drain-source on-resistance of 5 mOhms. Classified under discrete and power modules, it serves as a diode module solution for high-efficiency power conversion applications requiring robust thermal and electrical performance.
FET, MOSFET Arrays Feature Summary
- Integrates PM-MOSFET and FREDFET technologies within a single compact module
- Utilizes silicon technology for reliable power switching operations
- Designed with a low-profile LP-8 package for space-constrained layouts
FET, MOSFET Arrays Applications
- High-efficiency DC-DC converters
- Industrial power supply units
- Motor drive systems
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology before procurement. Confirm that the LP-8 package dimensions align with your PCB footprint requirements. Ensure that the 200 V reverse voltage and 5 mOhm on-resistance specifications meet your circuit design constraints. Check for any recent product change notifications that may affect pinout or material composition.
FET, MOSFET Arrays Selection Notes
Select this component when a combined PM-MOSFET and FREDFET solution is required to minimize parasitic inductance and improve switching efficiency. The LP-8 package offers a balance between current handling capability and board space optimization. Consider the 5 mOhm on-resistance for conduction loss calculations and the 200 V rating for voltage headroom in medium-voltage applications.
FET, MOSFET Arrays Part Context
This module belongs to Microchip's discrete and power modules category, specifically designed for advanced power electronics. It represents a consolidation of multiple discrete components into a single integrated unit to enhance system reliability and reduce assembly complexity. The use of silicon technology ensures compatibility with standard manufacturing processes and thermal management solutions.
FET, MOSFET Arrays Replacement Considerations
Consult Microchip Technology's official documentation for verified substitute part numbers. Cross-reference package dimensions and electrical parameters such as on-resistance and voltage ratings to ensure functional equivalence. Verify that any alternative component maintains the same PM-MOSFET and FREDFET integration architecture.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
