MSCSM120AM027CD3AG

FET, MOSFET Arrays Overview

The MSCSM120AM027CD3AG is a silicon carbide (SiC) MOSFET and SiC Schottky Barrier Diode (SBD) discrete semiconductor module manufactured by Microchip Technology. It utilizes N-Channel technology with a D3 package style and screw mount installation. The device features a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 495 A, and a maximum power dissipation of 2.031 kW. Key electrical parameters include an on-resistance of 5.2 mOhms, a forward voltage of 1.5 V, and gate-source voltage limits of -10 V to +25 V. Operating temperatures range from -40°C to +125°C.

FET, MOSFET Arrays Feature Summary

• Integrates high-voltage SiC MOSFET and SiC SBD in a single compact module for efficient power conversion.
• Designed for high-power density applications with robust thermal performance and low switching losses.
• Features screw mount terminals for secure mechanical connection and reliable electrical contact.

FET, MOSFET Arrays Applications

• Electric vehicle powertrains and charging systems
• Industrial motor drives and inverters
• Renewable energy solar inverters

FET, MOSFET Arrays Procurement Notes

Verify the exact part number suffix against official Microchip documentation to ensure correct pinout and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high current capacity and low conduction losses at 1.2 kV ratings. Ensure the gate driver supports the specified voltage range and that the thermal management system can handle the 2.031 W/°C power dissipation. Compare on-resistance values with alternative packages to optimize efficiency for the specific application frequency.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's MSCSM series of silicon carbide discrete modules. These modules are engineered to replace traditional silicon IGBTs in high-efficiency power electronics. The D3 package provides a standardized form factor for integration into various industrial and automotive power stages.

FET, MOSFET Arrays Replacement Considerations

Direct replacements may include other Microchip SiC modules with similar current ratings and package types, such as the MSCSM120AM042CD3AG. Verify compatibility with existing PCB layouts and thermal interfaces before substitution.