MSCSM120AM027D3AG

FET, MOSFET Arrays Overview

The MSCSM120AM027D3AG is a full bridge phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 733A. It features an RDS(on) of 3.5 mΩ, a gate-source voltage range of -10V to +23V, and a threshold voltage of 1.8V. The device operates within a junction temperature range of -40°C to 175°C with a thermal resistance of 0.051 °C/W. Dynamic characteristics include a turn-on delay of 74 ns, fall time of 51 ns, and total gate charge of 2088 nC. The package utilizes M6 connectors and an Aluminum Nitride substrate.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide technology for high-temperature performance and low on-resistance
• Incorporates Kelvin source connections to facilitate easy drive circuitry
• Features an Aluminum Nitride substrate designed to improve thermal management
• Provides direct mounting to heatsinks via isolated packaging

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A from June 2022 when sourcing this component. Confirm that handling procedures account for electrostatic discharge sensitivity as specified in the manufacturer documentation. Ensure compatibility with M6 mounting torque requirements ranging from 3 to 5 N.m for both terminals and heatsink interfaces during installation.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high current density and robust thermal performance. The integrated Kelvin source simplifies gate drive design compared to standard configurations. Consider the 1200V rating and 733A continuous current capability when designing for heavy-duty industrial or electric vehicle environments where efficiency and heat dissipation are critical constraints.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET module lineup, specifically utilizing the D3 package format. It represents a high-power discrete semiconductor solution engineered for demanding power conversion topologies. The module integrates multiple devices into a single isolated unit to reduce system footprint and simplify assembly processes for advanced power electronics designs.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature for this module?

The recommended operating junction temperature under switching conditions ranges from -40°C up to TJmax minus 25°C, while the absolute maximum junction temperature is 175°C.

How does the Kelvin source benefit the drive circuit?

The Kelvin source provides a dedicated connection point for the gate drive return path, separating it from the high-current source terminal to minimize noise and ensure stable switching performance.

What type of substrate material is used in this package?

The module uses an Aluminum Nitride (AlN) substrate, which is selected for its superior thermal conductivity compared to traditional materials like aluminum oxide.