MSCSM120AM03T6LIAG

$936.41

Description：MOSFET 2N-CH 1200V 805A
Series：-

SKU:f1e4fd55ab6f Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120AM03T6LIAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 805A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM03T6LIAG

Description：MOSFET 2N-CH 1200V 805A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：805A (Tc)
Rds On (Max) @ Id, Vgs：3.1mOhm @ 400A, 20V
Vgs(th) (Max) @ Id：2.8V @ 30mA
Gate Charge (Qg) (Max) @ Vgs：2320nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：30200pF @ 1000V
Power - Max：3.215kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM03T6LIAG

MSCSM120AM03T6LIAG

FET, MOSFET Arrays Overview

The MSCSM120AM03T6LIAG is a very low stray inductance phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration with a drain-source voltage rating of 1200 V and a continuous drain current of 805 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 3.1 mΩ and operates within a junction temperature range of -40 °C to 175 °C. Key electrical parameters include a gate threshold voltage of 1.8 V to 2.8 V, total gate charge of 2320 nC, and a junction-to-case thermal resistance of 0.047 °C/W. The module utilizes an Aluminum Nitride substrate and includes an internal thermistor for temperature monitoring.

FET, MOSFET Arrays Feature Summary

Very low stray inductance design optimized for high-frequency switching performance
Integrated internal thermistor for precise junction temperature monitoring
Aluminum Nitride substrate providing improved thermal conductivity and low thermal resistance
Direct mounting isolated package compatible with heatsink attachment

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004570A when sourcing components to ensure alignment with the latest technical specifications. Confirm that handling procedures strictly adhere to electrostatic discharge precautions due to component sensitivity. Ensure that mechanical mounting torque values for M2.5, M4, and M5 terminals match the requirements outlined in the official documentation before assembly.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high efficiency and robust thermal management under high-voltage conditions. The low stray inductance makes it suitable for designs prioritizing fast switching speeds and reduced electromagnetic interference. Evaluate the system's cooling capabilities against the specified junction-to-case thermal resistance to maintain optimal operating temperatures within the recommended range during continuous operation.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module portfolio, designed to enhance system-level efficiency and reliability. It complements other SiC devices such as Schottky barrier diodes and discrete MOSFETs, supporting advanced power electronics architectures. The SP6LI package format facilitates integration into compact industrial and automotive power conversion systems requiring high power density.