MSCSM120AM042CD3AG

$795.63

Description：MOSFET 2N-CH 1200V 495A D3
Series：-

SKU:81f01a1045c9 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120AM042CD3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 495A D3. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM042CD3AG

Description：MOSFET 2N-CH 1200V 495A D3
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：495A (Tc)
Rds On (Max) @ Id, Vgs：5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id：2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：18.1pF @ 1000V
Power - Max：2.031kW (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：D3
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM042CD3AG

MSCSM120AM042CD3AG

FET, MOSFET Arrays Overview

The MSCSM120AM042CD3AG is a phase leg silicon carbide power module featuring a 1200 V drain-source voltage and a continuous drain current of 495 A at 25 °C. It integrates an SiC MOSFET with a typical on-resistance of 5.2 mΩ and a complementary SiC Schottky diode with a forward voltage of 1.5 V. The device utilizes an aluminum nitride substrate for thermal management, achieving a junction-to-case thermal resistance of 0.074 °C/W for the MOSFET. Designed for high-power applications, it supports operating temperatures up to 175 °C.

FET, MOSFET Arrays Feature Summary

Integrated Kelvin emitter connection facilitates simplified gate drive circuitry.
Aluminum nitride substrate provides enhanced thermal conductivity and performance.
SiC Schottky diode exhibits zero reverse recovery and zero forward recovery characteristics.
M6 power connectors enable secure mechanical mounting.

FET, MOSFET Arrays Applications

Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm datasheet revision alignment with design requirements. Ensure electrostatic discharge handling protocols are strictly followed during storage and assembly. Validate thermal interface material compatibility with the isolated package structure. Review absolute maximum ratings against specific application stress conditions prior to integration.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high current density and low switching losses in phase leg configurations. Evaluate thermal impedance curves to determine appropriate heatsinking for target operating frequencies. Consider the integrated Schottky diode characteristics for freewheeling paths. Assess gate drive requirements based on total gate charge specifications. Verify isolation voltage ratings match system safety standards.

FET, MOSFET Arrays Part Context

This component belongs to the Microsemi (now Microchip Technology) MSCSM series of discrete semiconductor modules. It represents a high-voltage silicon carbide technology platform designed to replace traditional silicon devices in demanding power conversion environments. The D3 package format allows for direct mounting to heatsinks, supporting compact industrial and automotive power electronics architectures.