MSCSM120AM11CT3AG

FET, MOSFET Arrays Overview

The MSCSM120AM11CT3AG is a discrete semiconductor module from Microchip Technology, classified as a PM-MOSFET-SIC-SBD-SP3F device. It utilizes Silicon Carbide (SiC) technology and features an SP3F package with screw mount installation. The module contains N-Channel MOSFETs and SiC Schottky Barrier Diodes (SBD). Key electrical parameters include a drain-source breakdown voltage (Vds) of 1.2 kV, a continuous drain current (Id) of 89 A, and a maximum gate-source voltage (Vgs) range of -10 V to +25 V. The on-resistance (Rds(on)) is 31 mOhms, with a forward voltage (Vf) of 1.5 V for the diode. Power dissipation is rated at 395 W, and it operates within a temperature range of -40°C to +125°C.

FET, MOSFET Arrays Feature Summary

• Integrated Silicon Carbide MOSFET and Schottky Barrier Diode configuration for high-efficiency power conversion.
• SP3F package design optimized for low thermal resistance and robust mechanical mounting via screw terminals.
• Enhanced thermal performance capabilities enabled by the specific module construction and material properties.

FET, MOSFET Arrays Applications

• High-frequency switching power supplies
• Industrial motor drives and inverters
• Uninterruptible power supply (UPS) systems

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including all suffixes against official Microchip documentation to ensure correct pinout and electrical specifications. Confirm RoHS compliance status and specific manufacturing lot details through authorized distributors. Check for any recent Product Change Notices (PCN) or errata sheets that may impact integration or long-term availability. Ensure sourcing channels are authorized to guarantee component authenticity and traceability.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high voltage blocking capability and low conduction losses in compact form factors. The SP3F package suits designs needing reliable screw-mount connections and efficient heat dissipation. Compare Rds(on) and thermal characteristics against alternative packages if space constraints differ. Ensure gate drive circuits support the specified Vgs limits and switching speeds inherent to SiC devices.

FET, MOSFET Arrays Part Context

This component belongs to the MSCSM120x series of Silicon Carbide power modules from Microchip Technology. These modules are designed to replace traditional silicon-based solutions in high-power density applications. The series offers improved efficiency and reduced system size due to the superior material properties of Silicon Carbide compared to Silicon.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Cross-reference pinouts and thermal pads when considering modules from other manufacturers. Verify that any substitute meets the same voltage, current, and thermal requirements.