MSCSM120AM16T1AG

FET, MOSFET Arrays Overview

The MSCSM120AM16T1AG is a phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration with a drain-source voltage rating of 1200 V and a continuous drain current of 173 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 16 mΩ and supports a junction temperature range from -40 °C to +175 °C. Key electrical parameters include a gate threshold voltage of 1.8 V, total gate charge of 464 nC, and turn-on/turn-off delay times of 30 ns and 50 ns respectively. The module utilizes an Aluminum Nitride substrate for thermal management and includes an integrated NTC thermistor.

FET, MOSFET Arrays Feature Summary

• Kelvin source connection provided for simplified gate drive circuitry
• Internal negative temperature coefficient thermistor for real-time junction temperature monitoring
• Aluminum Nitride substrate utilized to enhance thermal conductivity and reduce junction-to-case resistance
• Very low stray inductance design optimized for high-frequency switching applications

FET, MOSFET Arrays Applications

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (DS00004579A) against the manufacturing date code to ensure compliance with current specifications. Confirm that the SP1F package mounting torque requirements are met during assembly. Ensure electrostatic discharge handling procedures are strictly followed due to component sensitivity. Cross-reference the internal gate resistance value with the intended driver output impedance for optimal switching performance.

FET, MOSFET Arrays Selection Notes

Select this component when designing isolated phase legs requiring high thermal efficiency and robust switching characteristics. The Kelvin source pin simplifies layout compared to standard four-terminal packages. Consider the 16 mΩ on-resistance for conduction loss calculations at target operating currents. Verify that the system's cooling solution can maintain the case temperature within the specified limits to support the rated 173 A continuous current capability.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's Silicon Carbide MOSFET product family, designed to replace traditional silicon IGBTs in high-power applications. It offers superior thermal performance and switching speeds compared to silicon counterparts. The SP1F packaging format allows for direct heatsink mounting while maintaining electrical isolation. This specific part number represents a single phase leg configuration suitable for bridge topologies.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.