MSCSM120AM31CT1AG

$107.71

Description：MOSFET 2N-CH 1200V 89A SP1F
Series：-

SKU:62aaf3c51e5b Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120AM31CT1AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 89A SP1F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120AM31CT1AG

Description：MOSFET 2N-CH 1200V 89A SP1F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
Power - Max：395W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP1F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120AM31CT1AG

MSCSM120AM31CT1AG

FET, MOSFET Arrays Overview

The MSCSM120AM31CT1AG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It features an N-Channel configuration housed in the SP1F screw-mount package. Key electrical parameters include a drain-source breakdown voltage of 1200V and a continuous drain current of 89A at case temperature. The on-resistance is specified as 31 milliohms at 40A with a gate-source voltage of 20V. Thermal performance includes a maximum power dissipation of 395W at case temperature, operating within a junction temperature range of -40°C to +175°C.

FET, MOSFET Arrays Feature Summary

Utilizes Silicon Carbide technology for high thermal conductivity and superior switching performance compared to silicon alternatives.
Integrates two N-channel MOSFETs in a phase-leg configuration suitable for bridge circuits.
Designed for baseplate mounting via screw installation style.

FET, MOSFET Arrays Applications

High-frequency power conversion systems
Industrial motor drives
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix CT1AG against official Microchip documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the SP1F package dimensions match the mechanical constraints of the intended heatsink assembly. Cross-reference the datasheet revision history to validate the electrical characteristics provided in this summary.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a 1200V rating with moderate current handling capabilities around 89A. The SP1F package offers a balance between thermal management and board space efficiency. Consider the 31 milliohm on-resistance for conduction loss calculations and verify that the gate drive voltage supports the specified threshold and maximum limits.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip MSCSM120 series of discrete semiconductor modules. These components are engineered for high-efficiency power electronics applications. The SP1F packaging standard facilitates integration into various industrial power architectures while maintaining robust thermal performance under demanding operating conditions.