MSCSM120AM50T1AG

FET, MOSFET Arrays Overview

The MSCSM120AM50T1AG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 55A. It features an internal NTC thermistor for temperature monitoring and utilizes an Aluminum Nitride substrate for improved thermal performance. The device includes a Kelvin source connection to facilitate easy gate drive implementation. Key electrical parameters include a maximum drain-source voltage of 1200V, continuous drain current of 55A at 25°C case temperature, and a typical on-resistance of 40mΩ at 25°C. The operating junction temperature range extends from -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Integrated Kelvin source terminal for simplified gate drive circuitry
• Internal negative temperature coefficient thermistor for precise junction temperature monitoring
• Aluminum Nitride substrate construction designed to enhance thermal conductivity and heat dissipation

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A (DS00004619A) matches your design requirements before procurement. Confirm that the SP1F package outline dimensions align with your mechanical constraints. Ensure proper electrostatic discharge handling procedures are followed during installation, as the device is sensitive to static damage. Cross-reference the mounting torque specifications for M4 screws to ensure secure attachment to the heatsink.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency converters requiring operation up to 175°C junction temperature. The integrated Kelvin source reduces layout complexity compared to modules without dedicated sense terminals. Consider the 55A continuous current rating relative to your thermal management strategy, as derating applies above 25°C case temperature. Verify compatibility with standard gate drive voltages within the specified -10V to 23V range.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's SiC MOSFET power module family, specifically designed for phase leg configurations. It complements other variants in the series by offering a balance of voltage rating and current capacity suitable for medium-power applications. The SP1F packaging provides a standardized footprint for integration into various industrial and automotive power electronics designs.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence with other packages or ratings without explicit manufacturer confirmation.