MSCSM120DDUM16TBL3NG

Description：MOSFET 4N-CH 1200V 150A
Series：-

SKU:7adde9adc686 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120DDUM16TBL3NG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 150A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120DDUM16TBL3NG

Description：MOSFET 4N-CH 1200V 150A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel, Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：150A
Rds On (Max) @ Id, Vgs：16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：6040pF @ 1000V
Power - Max：560W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120DDUM16TBL3NG

MSCSM120DDUM16TBL3NG

FET, MOSFET Arrays Overview

The MSCSM120DDUM16TBL3NG is a double dual common source silicon carbide (SiC) MOSFET power module rated at 1200V and 150A. It features an RDS(on) of 16 mΩ, a gate-source voltage range of -10V to +23V, and a continuous drain current of 150A at 25°C. The device includes an internal NTC thermistor with a resistance of 50 kΩ at 25°C and operates within a junction temperature range of -55°C to 175°C.

FET, MOSFET Arrays Feature Summary

Double dual common source configuration for high-speed switching applications
Kelvin source connection facilitates easy drive circuit integration
Silicon nitride substrate with thick copper layers for improved thermal performance
Integrated internal thermistor enables precise temperature monitoring

FET, MOSFET Arrays Applications

High reliability power systems
AC switches

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004653A when sourcing this component. Confirm that the ordering suffix matches the required package and terminal specifications. Ensure electrostatic discharge handling procedures are strictly followed during storage and assembly to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring isolated mounting directly to a heatsink. The low junction-to-case thermal resistance supports efficient heat dissipation in high-frequency operation scenarios. Verify that the gate drive voltage limits remain within the specified -10V to +23V range for reliable switching performance.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's silicon carbide power module family. It utilizes advanced SiC technology to achieve lower on-resistance and faster switching speeds compared to traditional silicon devices. The module is designed for high-power density applications where efficiency and thermal management are critical.