MSCSM120DHM31CTBL2NG

FET, MOSFET Arrays Overview

The MSCSM120DHM31CTBL2NG is an asymmetrical bridge silicon carbide (SiC) MOSFET power module rated at 1200 V and 79 A. It integrates SiC MOSFETs with a maximum on-resistance of 31 mΩ and SiC Schottky barrier diodes with a forward voltage of 1.5 V. The device features a total gate charge of 232 nC, turn-on delay of 30 ns, and fall time of 25 ns. Thermal performance includes a junction-to-heatsink resistance of 0.483 °C/W for the MOSFET and 0.854 °C/W for the diode. Operating junction temperature ranges from -55 °C to 175 °C.

FET, MOSFET Arrays Feature Summary

• Integrated Kelvin source terminals facilitate simplified gate drive circuitry.
• Utilizes a silicon nitride substrate with thick copper layers to enhance thermal dissipation.
• Incorporates an internal negative temperature coefficient thermistor for precise junction temperature monitoring.
• Features zero reverse recovery and zero forward recovery characteristics in the integrated Schottky diodes.

FET, MOSFET Arrays Applications

• High efficiency AC/DC and DC/AC converters
• Motor control systems
• High reliability power systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Microchip Technology documentation. Confirm that the datasheet revision matches the specific batch requirements. Ensure handling procedures account for electrostatic discharge sensitivity during installation. Validate that the mounting torque specifications are strictly adhered to during assembly to maintain thermal interface integrity.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and low switching losses. The integrated Schottky diodes eliminate reverse recovery issues, improving system efficiency. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive voltage limits align with the specified -10 V to +25 V range to ensure reliable switching performance.

FET, MOSFET Arrays Part Context

This component belongs to the Microchip Technology MSCSM120 series of silicon carbide power modules. It is designed as an asymmetrical bridge configuration, combining MOSFETs and Schottky diodes in a single isolated package. The series targets high-power density applications where superior thermal management and fast switching speeds are critical for overall system performance.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include MSCSM120HM31CTBL2NG and MSCSM120SKM31CTBL2NG.

FET, MOSFET Arrays FAQ

What is the function of the Kelvin source terminal?

The Kelvin source terminal provides a dedicated connection for the gate drive return path, separate from the high-current main source terminal. This configuration minimizes the impact of stray inductance and voltage drops in the power loop, ensuring accurate gate voltage sensing and stable switching performance.

How does the internal thermistor operate?

An NTC thermistor is embedded within the module to monitor the junction temperature. Its resistance changes predictably with temperature, allowing external circuits to estimate the internal die temperature for thermal protection and monitoring purposes without requiring additional external sensors.

What are the switching energy values under typical test conditions?

At a bus voltage of 600 V, drain current of 50 A, and junction temperature of 150 °C, the turn-on energy is typically 0.99 mJ and the turn-off energy is typically 0.66 mJ. These values depend on the external gate resistance settings used during operation.