MSCSM120DUM08T3AG

$336.31

Description：MOSFET 2N-CH 1200V 337A SP3F
Series：-

SKU:86987fd01c83 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120DUM08T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 337A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120DUM08T3AG

Description：MOSFET 2N-CH 1200V 337A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：337A (Tc)
Rds On (Max) @ Id, Vgs：7.8mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：12100pF @ 1000V
Power - Max：1409W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120DUM08T3AG

MSCSM120DUM08T3AG

FET, MOSFET Arrays Overview

The MSCSM120DUM08T3AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1200V and 337A. It features an RDS(on) of 7.8 mΩ, a maximum junction temperature of 175°C, and a low junction-to-case thermal resistance of 0.106 °C/W. The device includes an internal NTC thermistor with a 50 kΩ resistance at 25°C for temperature monitoring.

FET, MOSFET Arrays Feature Summary

Utilizes an Aluminum Nitride substrate to improve thermal performance.
Incorporates Kelvin source connections to facilitate easy gate drive implementation.
Designed with low stray inductance architecture for high-frequency operation.
Features an isolated package allowing direct mounting to heatsinks.

FET, MOSFET Arrays Applications

AC switches

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact electrical tolerances and packaging configurations. Ensure electrostatic discharge handling procedures are strictly followed during installation due to component sensitivity. Confirm that the required mounting torque aligns with the specified M4 terminal requirements.

FET, MOSFET Arrays Selection Notes

Select this module when high-temperature stability and low on-resistance are critical for system efficiency. The integrated Kelvin source simplifies driver design by minimizing noise coupling. Verify that the application voltage and current levels remain within the absolute maximum ratings defined in the datasheet.

FET, MOSFET Arrays Part Context

This component belongs to the Microchip Technology SiC MOSFET power module family. It utilizes Silicon Carbide technology to achieve superior switching speeds and thermal management compared to traditional silicon devices. The dual common source configuration supports various bridge topologies.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence based solely on voltage or current ratings without reviewing detailed electrical specifications.