MSCSM120DUM16T3AG

$190.83

Description：MOSFET 2N-CH 1200V 173A SP3F
Series：-

SKU:729adc21d130 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120DUM16T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 173A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120DUM16T3AG

Description：MOSFET 2N-CH 1200V 173A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：173A (Tc)
Rds On (Max) @ Id, Vgs：16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：6040pF @ 1000V
Power - Max：745W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120DUM16T3AG

MSCSM120DUM16T3AG

FET, MOSFET Arrays Overview

The MSCSM120DUM16T3AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 1200V and 173A. It features an RDS(on) of 16 mΩ, a maximum junction temperature of 175°C, and an RMS isolation voltage of 4000V. The device includes an internal NTC thermistor with a resistance of 50 kΩ at 25°C.

FET, MOSFET Arrays Feature Summary

Dual common source configuration for integrated switching applications
Kelvin source connection to facilitate low-inductance gate drive
Aluminum Nitride substrate for enhanced thermal conductivity
Integrated NTC thermistor for precise junction temperature monitoring

FET, MOSFET Arrays Applications

AC switches

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision status before design finalization. Confirm that the SP1F package mounting torque requirements are met during assembly. Ensure electrostatic discharge precautions are strictly followed during handling and installation to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component for high-frequency operations requiring low stray inductance. The isolated package allows direct heatsink mounting. Verify that the system can accommodate the 4000V RMS isolation rating and that the thermal management solution supports the specified junction-to-case thermal resistance.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip SiC MOSFET product family. It utilizes Silicon Carbide technology to achieve superior performance compared to traditional silicon devices. The dual common source design integrates two switches within a single compact package to reduce system footprint.