MSCSM120HM063AG

$726.95

Description：MOSFET 4N-CH 1200V 333A
Series：-

SKU:33ce59368a4e Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120HM063AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 333A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HM063AG

Description：MOSFET 4N-CH 1200V 333A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：333A (Tc)
Rds On (Max) @ Id, Vgs：7.8mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：12000pF @ 1000V
Power - Max：873W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120HM063AG

MSCSM120HM063AG

FET, MOSFET Arrays Overview

The MSCSM120HM063AG is a full bridge silicon carbide (SiC) power module rated at 1200V and 333A. It features an N-Channel configuration with a maximum drain-source on-resistance of 7.8 mΩ. The device operates within a junction temperature range of -40°C to +175°C and utilizes an SP6 package with screw mount installation. Key electrical parameters include a gate-source voltage limit of -10V/+23V, a typical turn-on delay time of 66 ns, and a fall time of 67 ns.

FET, MOSFET Arrays Feature Summary

Kelvin source connection for simplified gate drive implementation
Aluminum Nitride substrate providing improved thermal performance
Low stray inductance design optimized for high-frequency operation

FET, MOSFET Arrays Applications

Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A (DS00004646A) against your design requirements. Confirm that the SP6 package dimensions and M5 terminal torque specifications align with your mechanical assembly constraints. Ensure electrostatic discharge handling procedures are strictly followed during component integration.

FET, MOSFET Arrays Selection Notes

Select this module when a full bridge topology is required for high-power applications. The 1200V rating supports systems operating up to 800V bus voltages. Evaluate the 7.8 mΩ on-resistance against your conduction loss targets. Verify compatibility with the recommended gate resistance values for optimal switching performance.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET module family designed for high-efficiency power conversion. It integrates multiple discrete SiC MOSFETs into a single isolated package. The SP6 form factor allows direct mounting to heatsinks, facilitating compact system designs for industrial and automotive environments.