MSCSM120HM083CAG

$720.01

Description：SIC MOSFET
Series：-

SKU:47accc2f708d Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120HM083CAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SIC MOSFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HM083CAG

Description：SIC MOSFET
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120HM083CAG

MSCSM120HM083CAG

FET, MOSFET Arrays Overview

The MSCSM120HM083CAG is a full bridge silicon carbide power module by Microchip Technology. It features a 1200V drain-source breakdown voltage and an on-resistance of 8.3 milliohms. The continuous current rating is 200 amperes with a total gate charge of 696 nanocoulombs. Rise time is specified at typical values, supporting high-frequency operation. The device utilizes a low-inductance SP6LI package to minimize stray inductance to 3nH maximum.

FET, MOSFET Arrays Feature Summary

Full bridge configuration integrating SiC MOSFETs for compact power conversion designs
Extremely low stray inductance achieved through specialized SP6LI packaging architecture
High thermal efficiency enabled by silicon carbide semiconductor technology

FET, MOSFET Arrays Applications

High-efficiency AC/DC and DC/AC converters
Industrial motor control systems
High-reliability power supply units

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official Microchip Technology documentation before integration. Confirm that the SP6LI package dimensions and mounting requirements align with the target PCB layout and mechanical constraints. Ensure gate drive signals are compatible with the specified threshold and charge parameters to prevent switching anomalies.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring high voltage isolation and low conduction losses. The full bridge topology simplifies design complexity compared to discrete solutions. Consider the thermal management capabilities required for the specified power dissipation levels. Evaluate the trade-off between the low inductance benefits and the specific gate drive requirements necessary for optimal switching performance.

FET, MOSFET Arrays Part Context

This module belongs to the MSCSM120x series of silicon carbide power modules from Microchip Technology. These components are engineered for high-power density applications where efficiency and reliability are critical. The series leverages advanced SiC technology to outperform traditional silicon-based devices in terms of switching speed and thermal handling.