MSCSM120HM16CT3AG

FET, MOSFET Arrays Overview

The Microchip Technology MSCSM120HM16CT3AG is a silicon carbide (SiC) MOSFET power module utilizing the SP3 package. It features an N-channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 173 A. The device exhibits a maximum on-resistance of 16 mOhms at 25°C. Gate-source voltage limits are specified between -10 V and +23 V, with a threshold voltage of 1.8 V. Power dissipation reaches 745 W, operating within a temperature range of -40°C to +175°C. Switching characteristics include a typical turn-on delay of 30 ns, turn-off delay of 50 ns, rise time of 30 ns, and fall time of 25 ns.

FET, MOSFET Arrays Feature Summary

• Integrated full-bridge topology for three-phase inverter applications
• Utilizes thick copper Si3N4 substrate technology for enhanced thermal management
• Designed for high-frequency switching with low parasitic inductance

FET, MOSFET Arrays Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix CT3AG against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure screw-mount compatibility with existing heatsink infrastructure before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high efficiency and compact form factors in medium-power conversion systems. Evaluate thermal resistance requirements against the 745 W dissipation rating. Compare switching speeds against system EMI constraints. Verify gate drive voltage compatibility with the specified +/- limits.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip Agilesair series of SiC MOSFET power modules. These components are engineered for high reliability and performance in demanding power electronics environments. The SP3 packaging provides a robust mechanical solution for industrial-grade applications requiring efficient heat transfer.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent SP3 packaged SiC modules from Microchip. Verify that any alternative part matches the 1.2 kV rating, 173 A current capacity, and full-bridge configuration.