MSCSM120HM16T3AG

$336.31

Description：MOSFET 4N-CH 1200V 173A
Series：-

SKU:630e136148eb Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120HM16T3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 173A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HM16T3AG

Description：MOSFET 4N-CH 1200V 173A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：173A (Tc)
Rds On (Max) @ Id, Vgs：16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：6040pF @ 1000V
Power - Max：745W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120HM16T3AG

MSCSM120HM16T3AG

FET, MOSFET Arrays Overview

The MSCSM120HM16T3AG is a full bridge silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration with a drain-source voltage rating of 1200 V and a continuous drain current of 173 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 16 mΩ and supports a junction temperature range from -40 °C to +175 °C. Key electrical parameters include a gate threshold voltage of 1.8 V, total gate charge of 464 nC, and turn-on/turn-off delay times of 30 ns and 50 ns respectively. The module utilizes an aluminum nitride substrate for thermal management and includes an internal thermistor.

FET, MOSFET Arrays Feature Summary

Utilizes silicon carbide technology for high-temperature performance and low on-resistance
Incorporates an aluminum nitride substrate to enhance thermal dissipation capabilities
Features very low stray inductance design for improved switching performance
Includes an integrated internal thermistor for precise temperature monitoring

FET, MOSFET Arrays Applications

Uninterruptible power supplies
Welding converters
Switched mode power supplies
EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004613A when sourcing components to ensure alignment with final design specifications. Confirm that handling procedures strictly adhere to electrostatic discharge precautions due to component sensitivity. Ensure mounting torque requirements are met during installation to maintain proper thermal interface integrity and mechanical stability within the system architecture.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and efficient power conversion. The isolated package allows direct heatsink mounting, simplifying thermal design. Consider the 16 mΩ on-resistance and 173 A current rating when sizing cooling solutions. Verify compatibility with standard gate drive voltages and ensure the SP3F package dimensions fit the target PCB layout constraints.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET power module family, designed for robust industrial and automotive power electronics. It shares the SP3F package form factor with other variants in the series but differs in current and resistance ratings. The module integrates multiple switches into a single compact unit, reducing board space and interconnection parasitics compared to discrete implementations.