MSCSM120HM31CT3AG

$229.81

Description：MOSFET 4N-CH 1200V 89A SP3F
Series：-

SKU:7bca28d5f58f Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM120HM31CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 89A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HM31CT3AG

Description：MOSFET 4N-CH 1200V 89A SP3F
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
Power - Max：395W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：SP3F
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120HM31CT3AG

MSCSM120HM31CT3AG

FET, MOSFET Arrays Overview

The Microchip Technology MSCSM120HM31CT3AG is a silicon carbide (SiC) MOSFET and Schottky Barrier Diode (SBD) module configured as a full bridge. It utilizes the SP3F screw-mount package to facilitate robust thermal management in high-power applications. Key electrical specifications include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 89 A, and a maximum power dissipation of 395 W at case temperature. The device features a low on-resistance of 31 mOhms and operates within a junction temperature range of -40°C to +175°C.

FET, MOSFET Arrays Feature Summary

Integrates SiC MOSFETs with complementary SBDs for efficient switching and body diode replacement.
Designed for high-temperature operation with a maximum junction temperature rating of 175°C.
Utilizes a rugged SP3F screw-mount package structure for secure mechanical installation.

FET, MOSFET Arrays Applications

High-frequency power conversion systems
Industrial motor drive inverters
Uninterruptible power supply (UPS) units

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix configuration against the official datasheet to ensure compatibility with required gate drive voltages and thermal interface materials. Confirm that the SP3F mounting pattern aligns with the heatsink design. Check for recent Product Change Notifications regarding packaging or assembly site updates before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring high-voltage handling and superior thermal performance compared to silicon alternatives. Ensure the gate driver can accommodate the specified -10 V to +25 V range. Evaluate the 31 mOhm on-resistance against system conduction loss requirements and verify that the 89 A current rating meets peak load demands without exceeding thermal limits.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's discrete semiconductor portfolio focused on wide-bandgap technologies. It represents an evolution in power electronics by combining SiC MOSFETs with SBDs to minimize switching losses. The product line targets demanding industrial environments where reliability and efficiency are critical operational parameters.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent SP3F packaged SiC modules from the same manufacturer family. Verify pinout compatibility and thermal resistance characteristics before replacing existing designs with alternative part numbers.