MSCSM120HM31CTBL2NG

FET, MOSFET Arrays Overview

The MSCSM120HM31CTBL2NG is a full bridge silicon carbide (SiC) MOSFET power module rated at 1200 V and 79 A. It integrates SiC MOSFETs with low RDS(on) and high-speed switching capabilities, alongside SiC Schottky diodes featuring zero reverse recovery. The device utilizes a SP3F isolated package with an Si3N4 substrate for improved thermal performance and includes an internal thermistor. Key electrical parameters include a maximum drain-source voltage of 1200 V, continuous drain current of 79 A at 25 °C, and an operating junction temperature range up to 175 °C.

FET, MOSFET Arrays Feature Summary

• Integrated full bridge configuration combining SiC MOSFETs and Schottky diodes
• Temperature independent switching behavior with positive temperature coefficient on forward voltage
• Kelvin source connection for simplified gate drive implementation
• Internal NTC thermistor for precise junction temperature monitoring

FET, MOSFET Arrays Applications

• High efficiency AC/DC and DC/AC converters
• Motor control systems
• High reliability power systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004080A against your design requirements. Confirm that the SP3F package dimensions and mounting torque specifications align with your mechanical constraints. Ensure electrostatic discharge handling procedures are strictly followed during assembly, as the components are sensitive to ESD damage.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and superior thermal management due to its low junction-to-heatsink thermal resistance. The integrated Kelvin source reduces parasitic inductance effects, making it suitable for demanding gate drive environments. Consider the 1200 V rating and 79 A current capacity when designing the power stage for robustness under varying load conditions.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's MSCSM120 series of discrete semiconductor modules. It represents a transition towards silicon carbide technology within their portfolio, offering enhanced performance over traditional silicon counterparts. The module is designed to replace older discrete solutions by providing a highly integrated, compact, and efficient power conversion solution.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes are not explicitly listed in the official documentation. Designers should evaluate other Microchip SiC modules or comparable industry offerings based on voltage, current, and thermal specifications. Verify pin compatibility and thermal interface requirements before attempting any cross-referencing.

FET, MOSFET Arrays FAQ

What is the recommended operating junction temperature range?

The recommended junction temperature under switching conditions ranges from -55 °C to TJmax-25 °C, while the absolute maximum operating junction temperature is 175 °C.

How does the module handle thermal management?

It features an Si3N4 substrate with thick copper for improved thermal performance and provides a low junction-to-heatsink thermal resistance. An internal NTC thermistor allows for direct temperature monitoring.

What are the characteristics of the integrated body diode?

The SiC Schottky diodes exhibit zero reverse recovery and zero forward recovery, contributing to high efficiency and reduced switching losses compared to standard silicon diodes.