MSCSM120HM31TBL2NG

$209.65

Description：MOSFET 4N-CH 1200V 79A
Series：-

SKU:60a4cfa1d1d8 Category: FET, MOSFET Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MSCSM120HM31TBL2NG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 79A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120HM31TBL2NG

Description：MOSFET 4N-CH 1200V 79A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：79A
Rds On (Max) @ Id, Vgs：31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：3020pF @ 1000V
Power - Max：310W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM120HM31TBL2NG

MSCSM120HM31TBL2NG

FET, MOSFET Arrays Overview

The MSCSM120HM31TBL2NG is a phase leg silicon carbide (SiC) MOSFET power module rated at 1200V and 79A. It features an RDS(on) of 31 mΩ, a continuous drain current of 79A at 25°C, and a maximum junction temperature of 175°C. The device includes an internal NTC thermistor with a resistance of 50 kΩ at 25°C.

FET, MOSFET Arrays Feature Summary

Integrated Kelvin source for simplified gate drive circuitry
Silicon nitride substrate with thick copper for enhanced thermal management
Internal thermistor for precise junction temperature monitoring
Solderable terminals for both power and signal connections

FET, MOSFET Arrays Applications

High reliability power systems
High efficiency AC/DC and DC/AC converters
Motor control

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision A from June 2022 to ensure compatibility with design requirements. Confirm that handling procedures account for electrostatic discharge sensitivity. Check isolation voltage ratings against system insulation needs before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and low switching losses. Ensure heatsink mounting torque remains within the specified 1.5 to 2 N.m range. Verify that gate drive voltages align with the -10V to +23V limits to maintain optimal performance and device longevity.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's SiC MOSFET power module family. It utilizes a baseless package design intended for direct mounting to heatsinks. The module integrates both MOSFET and body diode characteristics within a single isolated package structure.