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MSCSM120HM50CT3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V 55A SP3F. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120HM50CT3AG
- Description：MOSFET 4N-CH 1200V 55A SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Rds On (Max) @ Id, Vgs：50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：137nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：1990pF @ 1000V
- Power - Max：245W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP3F
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120HM50CT3AG
FET, MOSFET Arrays Overview
The MSCSM120HM50CT3AG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration housed in the SP3F screw-mount package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 55 A, and a maximum on-resistance of 50 mΩ. The device operates within a temperature range of -40°C to +175°C with a power dissipation rating of 245 W.
FET, MOSFET Arrays Feature Summary
- Integrated full-bridge topology utilizing SiC technology for high-efficiency switching.
- Designed for robust thermal management with screw-mount installation capabilities.
- Optimized switching characteristics including defined rise and fall times.
FET, MOSFET Arrays Applications
- Industrial motor drives
- High-frequency power supplies
- Uninterruptible power systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'T3AG' against official Microchip documentation to confirm pinout compatibility and manufacturing origin. Ensure that the SP3F package dimensions align with your mechanical design constraints before finalizing procurement decisions.
FET, MOSFET Arrays Selection Notes
Select this component when a complete single-phase bridge solution is required. The integrated nature reduces board space compared to discrete components. Verify that the 55 A current rating meets the peak load requirements of the target application circuit.
FET, MOSFET Arrays Part Context
This module belongs to the Microchip SiC MOSFET power module family. It integrates multiple switches into a single unit to simplify circuit design. The SP3F package provides a standardized footprint for industrial power electronics applications requiring high voltage handling.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution lists for equivalent SP3F packaged SiC modules. Verify that any alternative part matches the 1.2 kV rating and 50 mΩ resistance specifications to ensure functional parity.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
