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MSCSM120HRM052NG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 4N-CH 1200V/700V 472A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM120HRM052NG
- Description：MOSFET 4N-CH 1200V/700V 472A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Three Level Inverter)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV), 700V
- Current - Continuous Drain (Id) @ 25°C：472A (Tc), 442A (Tc)
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id：2.8V @ 18mA, 2.4V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs：1392nC @ 20V, 860nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：18100pF @ 1000V, 18000pF @ 700V
- Power - Max：1.846kW (Tc), 1.161kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM120HRM052NG
FET, MOSFET Arrays Overview
The MSCSM120HRM052NG is a T-type Silicon Carbide (SiC) MOSFET power module containing a phase leg with 1200V, 472A SiC MOSFETs and a dual common source configuration with 700V, 442A SiC MOSFETs. The device features low RDS(on), high temperature performance, Kelvin sources for easy drive, low stray inductance, M5 power connectors, and a silicon nitride substrate for improved thermal performance.
FET, MOSFET Arrays Feature Summary
- T-type SiC MOSFET architecture
- Kelvin source connection
- Silicon nitride substrate
FET, MOSFET Arrays Applications
- Solar inverter
- Three level inverter
- Uninterruptible power supplies
FET, MOSFET Arrays Procurement Notes
Verify the datasheet revision number A from February 2023 to ensure compatibility with your design specifications. Confirm that handling procedures account for electrostatic discharge sensitivity as specified by the manufacturer. Ensure mounting torque adheres to the recommended values for both heatsink and terminal connections.
FET, MOSFET Arrays Selection Notes
Select this component when designing systems requiring high-frequency operation and direct mounting to a heatsink. Consider the low junction-to-case thermal resistance and isolated package profile for efficient thermal management. Evaluate the specific voltage and current ratings against your application's peak load requirements.
FET, MOSFET Arrays Part Context
This module integrates multiple SiC MOSFETs into a single package, combining a 1200V phase leg with a 700V dual common source arrangement. It utilizes an M5 connector system and offers a low-profile design suitable for compact power electronics applications requiring high reliability and thermal efficiency.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are available in the official documentation.
FET, MOSFET Arrays FAQ
What is the maximum operating junction temperature?
The recommended junction temperature under switching conditions ranges from -40°C to TJmax-25°C, with an absolute maximum of 175°C.
Does the module include Kelvin sources?
Yes, the device includes Kelvin sources designed for easy gate drive implementation.
What type of substrate does the module use?
The module uses a silicon nitride (Si3N4) substrate to improve thermal performance.
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