FET, MOSFET Arrays MSCSM120TAM11CTPAG product image

MSCSM120TAM11CTPAG

$915.20
  • Description:MOSFET 6N-CH 1200V 251A SP6-P
  • Series:-

SKU:a2bdedb3404d Category: Brand:

  
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MSCSM120TAM11CTPAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1200V 251A SP6-P. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM120TAM11CTPAG

  • Description:MOSFET 6N-CH 1200V 251A SP6-P
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:6 N-Channel (3-Phase Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:251A (Tc)
  • Rds On (Max) @ Id, Vgs:10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id:2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs:696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:9060pF @ 1000V
  • Power - Max:1.042kW (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP6-P
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM120TAM11CTPAG

MSCSM120TAM11CTPAG

FET, MOSFET Arrays Overview

The MSCSM120TAM11CTPAG is a triple phase leg Silicon Carbide MOSFET power module manufactured by Microchip Technology. It utilizes N-Channel technology with a 1.2 kV drain-source breakdown voltage and a continuous drain current of 251 A at case temperature. The device features a maximum on-resistance of 10.4 mOhms at 120 A and 20 V gate drive. It operates within a junction temperature range of -40°C to +175°C and supports a maximum power dissipation of 1042 W. The module employs screw mount installation in an SP6-P package, with typical turn-on and turn-off delays of 30 ns and 50 ns respectively.

FET, MOSFET Arrays Feature Summary

  • Triple phase leg configuration integrating three independent N-channel SiC MOSFETs for high-power conversion applications
  • Silicon Carbide construction enabling operation at elevated junction temperatures up to 175°C
  • Low on-state resistance characteristics optimized for efficient conduction in high-current scenarios

FET, MOSFET Arrays Applications

  • Industrial motor drives and variable frequency drives
  • High-efficiency DC-DC converters and power supplies
  • Uninterruptible power systems (UPS) and renewable energy inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm thermal interface material requirements and mounting torque specifications for the SP6-P package. Ensure compatibility with recommended gate driver voltages and check for any product change notifications affecting pinout or electrical parameters.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high current density and wide bandgap performance. Evaluate thermal management solutions capable of handling 1042 W dissipation. Compare total system efficiency gains against cost implications relative to silicon alternatives. Verify that the 1.2 kV rating provides sufficient margin for the target application's bus voltage.

FET, MOSFET Arrays Part Context

This part belongs to the Microchip MSCSM120 series of discrete semiconductor modules. It represents a high-power solution leveraging Silicon Carbide technology for superior thermal and electrical performance compared to traditional silicon devices. The triple phase leg architecture simplifies layout for three-phase power electronics systems.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent triple phase SiC modules from Microchip or other manufacturers. Verify matching voltage, current, and thermal specifications when considering cross-brand replacements.

MSCSM120TAM11CTPAGMSCSM120TAM11CTPAG
$915.20
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