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MSCSM120TAM16TPAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 1200V 171A. Review the specifications below when checking this part for your BOM.
The MSCSM120TAM16TPAG is a triple phase leg silicon carbide (SiC) power module rated at 1200V and 171A. It features an SP6-P isolated package with screw mounting. Key electrical parameters include a drain-source on-resistance of 16 mΩ, a gate threshold voltage of 1.8V to 2.8V, and a maximum junction temperature of 175°C. The device incorporates an internal NTC thermistor for thermal monitoring.
Verify the specific suffix TPAG against official Microchip documentation to confirm pinout and terminal compatibility. Confirm RoHS compliance status through current datasheets. Ensure handling procedures account for electrostatic discharge sensitivity during installation.
Select this module for high-frequency applications requiring low stray inductance and efficient thermal management. The Kelvin source simplifies driver design compared to standard configurations. Verify that the system can accommodate the required M6 mounting torque and isolation voltage ratings.
This component belongs to the Microchip MSCSM120 series of discrete semiconductor modules. It utilizes Silicon Carbide technology to achieve superior switching performance and thermal characteristics compared to traditional silicon devices within the same voltage class.
Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence with other packages or voltage ratings without cross-referencing datasheet specifications.
The Kelvin source provides a dedicated low-inductance path for the gate drive return, separating it from the high-current power source to ensure stable switching performance.
An internal NTC thermistor is integrated into the module, allowing for direct temperature monitoring via external sensing circuits.
The module utilizes an Aluminum Nitride (AlN) substrate to improve thermal conductivity and reduce junction-to-case thermal resistance.
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