MSCSM120TLM08CAG

FET, MOSFET Arrays Overview

The MSCSM120TLM08CAG is a Silicon Carbide (SiC) power module manufactured by Microchip Technology, designed for high-efficiency switching applications. It integrates SiC MOSFETs and Schottky Barrier Diodes within an SP6C package to minimize parasitic inductance. Key electrical specifications include a drain-source breakdown voltage of 1.2 kV and a typical on-resistance of 6.3 mΩ. The module supports a continuous current rating of 265 A and handles up to 333 A peak current. It operates within a junction temperature range of -40°C to +175°C, featuring a total gate charge of 928 nC and a rise time of approximately 30 ns.

FET, MOSFET Arrays Feature Summary

• Utilizes a silicon nitride substrate with thick copper layers to enhance thermal conductivity and heat dissipation capabilities.
• Incorporates an extremely low inductance SP6LI package design to reduce switching losses and electromagnetic interference.
• Combines SiC Power MOSFETs with SiC Schottky Barrier Diodes to achieve superior dynamic performance and zero reverse recovery charge.

FET, MOSFET Arrays Applications

• Three-level inverter systems
• High-frequency power conversion circuits
• Industrial motor drives

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and package variant against the official Microchip datasheet before procurement. Ensure that the SP6C package dimensions and terminal configurations match the target PCB layout or mechanical assembly requirements. Confirm compliance with RoHS directives and check for any recent product change notifications regarding manufacturing updates.

FET, MOSFET Arrays Selection Notes

Select this module when designing systems requiring high voltage isolation and low conduction losses at elevated temperatures. The low on-resistance and fast switching characteristics make it suitable for applications prioritizing energy efficiency and compact form factors. Evaluate thermal management solutions based on the specified power dissipation limits and operating temperature range.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's discrete semiconductor module portfolio, specifically targeting high-power density applications. It represents the integration of wide-bandgap silicon carbide technology into standardized packaging formats. The module serves as a critical power switching element in modern electronic systems demanding robust performance under harsh electrical and thermal conditions.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for qualified alternative part numbers within the same series. Verify pin compatibility and thermal interface specifications when considering substitutes from other manufacturers to ensure system integrity.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature for this module?

The module supports operation up to a maximum junction temperature of 175°C.

Does this module include integrated diodes?

Yes, the module integrates Silicon Carbide Schottky Barrier Diodes alongside the MOSFETs.